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BCP54晶体管资料

  • BCP54别名:BCP54三极管、BCP54晶体管、BCP54晶体三极管

  • BCP54生产厂家:荷兰飞利浦公司

  • BCP54制作材料:Si-NPN

  • BCP54性质:射频/高频放大 (HF)_功率放大 (L)

  • BCP54封装形式:贴片封装

  • BCP54极限工作电压:45V

  • BCP54最大电流允许值:1A

  • BCP54最大工作频率:130MHZ

  • BCP54引脚数:3

  • BCP54最大耗散功率:1.5W

  • BCP54放大倍数:β=250

  • BCP54图片代号:H-99

  • BCP54vtest:45

  • BCP54htest:130000000

  • BCP54atest:1

  • BCP54wtest:1.5

  • BCP54代换 BCP54用什么型号代替

BCP54价格

参考价格:¥0.6257

型号:BCP54 品牌:Fairchild 备注:这里有BCP54多少钱,2026年最近7天走势,今日出价,今日竞价,BCP54批发/采购报价,BCP54行情走势销售排行榜,BCP54报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCP54

丝印代码:BCP54;45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

丝印代码:BCP54;45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

NEXPERIA

安世

BCP54

Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51...BCP53 (PNP)

HOTTECH

合科泰

BCP54

TRANSISTOR (NPN)

FEATURES e For AF driver and output stages e High collector current e Low collector-emitter saturation voltage eo Complementary types: BCP51 ... BCP53 (PNP)

FUXINSEMI

富芯森美

BCP54

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

SIEMENS

西门子

BCP54

SOT-223 Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP)

DGNJDZ

南晶电子

BCP54

SOT-223 Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP)

DGNJDZ

南晶电子

BCP54

TRANSISTOR (NPN)

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

WINNERJOIN

永而佳

BCP54

High Collector Current

Features High collector current 1.3 W power dissipation.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BCP54

45 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NEXPERIA

安世

BCP54

45 V, 1 A NPN medium power transistors

ETC

知名厂家

BCP54

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

JIANGSU

长电科技

BCP54

NPN Medium Power Transistor

■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP51,BCP52,BCP53

KEXIN

科信电子

BCP54

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.

FAIRCHILD

仙童半导体

BCP54

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

PHILIPS

飞利浦

BCP54

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

INFINEON

英飞凌

BCP54

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

INFINEON

英飞凌

BCP54

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP51 BCP52 and BCP53

CDIL

BCP54

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

BCP54

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

DIOTEC

德欧泰克

BCP54

Surface Mount General Purpose Si-Epi-Planar Transistors

文件:108.22 Kbytes Page:2 Pages

DIOTEC

德欧泰克

BCP54

45 V, 1 A NPN medium power transistors

文件:299.68 Kbytes Page:22 Pages

EPCOS

爱普科斯

BCP54

NPN Silicon AF Transistors

文件:530.52 Kbytes Page:7 Pages

INFINEON

英飞凌

BCP54

45 V, 1 A NPN medium power transistors

文件:160.55 Kbytes Page:15 Pages

PHILIPS

飞利浦

BCP54

NPN General Purpose Amplifier

文件:204.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

BCP54

NPN General Purpose Amplifier

文件:307.75 Kbytes Page:9 Pages

ONSEMI

安森美半导体

BCP54

NPN Transistors

文件:945.09 Kbytes Page:3 Pages

KEXIN

科信电子

BCP54

For AF driver and output stages

文件:1.00096 Mbytes Page:4 Pages

LEIDITECH

雷卯电子

BCP54

45 V, 1 A NPN medium power transistors

ETC

知名厂家

BCP54

General Purpose Transistor

INFINEON

英飞凌

BCP54

NPN, 45V, 1A, SOT223

DIODES

美台半导体

BCP54

For AF driver and output stages

文件:533.22 Kbytes Page:5 Pages

FS

BCP54

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 45V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

丝印代码:BCP54/10;45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

丝印代码:BCP54/10;45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

NEXPERIA

安世

丝印代码:BCP54/16;45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

丝印代码:BCP54/16;45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

NEXPERIA

安世

丝印代码:BCP5416;NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

丝印代码:BCP54T;45 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

丝印代码:BCP54-16;NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

TECHPUBLIC

台舟电子

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

45 V, 1 A NPN medium power transistors

ETC

知名厂家

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

SIEMENS

西门子

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

INFINEON

英飞凌

45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

丝印代码:P5410T;45 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

PHILIPS

飞利浦

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

INFINEON

英飞凌

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

INFINEON

英飞凌

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

SIEMENS

西门子

45 V, 1 A NPN medium power transistors

ETC

知名厂家

General Purpose Transistor

Features - High collector current. - Low collector-emitter saturation voltage.

COMCHIP

典琦

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

丝印代码:P5416T;45 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NEXPERIA

安世

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

SIEMENS

西门子

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

INFINEON

英飞凌

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

•For AF driver and output stages •High collector current •Low collector-emitter saturation voltage •Complementary types: BCP 51M...BCP 53M(PNP)

SIEMENS

西门子

BCP54产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    On Request*

  • Product Type:

    NPN

  • IC (A):

    1 A

  • ICM (A):

    2 A

  • PD (W):

    2 W

  • hFE (min):

    40 Min

  • hFE(@ IC):

    0.15 A

  • hFE(Min 2):

    25

  • hFE(@ IC2):

    0.5 A

  • VCE (SAT)Max (mV):

    500 mV

  • VCE (SAT) (@ IC/IB2) (A/m A) (A/m A):

    N/A

  • VCE (SAT)(Max.2):

    N/A mV

  • VCE (SAT) (@ IC/IB) (A/m A):

    0.5/50

  • fT (MHz):

    150 MHz

  • RCE(SAT):

    N/A mΩ

  • Packages:

    SOT223

更新时间:2026-5-14 15:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
SOT-223
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
Infineon
19+
SOT223
9000
DIODES/美台
2025+
SOT223
5000
原装进口价格优 请找坤融电子!
Nexperia/安世
21+
SOT-223
93000
十年信誉,只做原装,有挂就有现货!
恩XP
25+
N/A
12421
原装正品现货,原厂订货,可支持含税原型号开票。
恩XP
19+
SOT-89
120000
NEXPERIA/安世
25+
SOT223
33500
全新进口原装现货,假一罚十
恩XP
18+
SOT-223-3
17000
恩XP
24+
SOT223
89000
全新原装现货,假一罚十
恩XP
24+
SOT23
996000
郑重承诺只做原装进口现货

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