NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

45 V, 1 A NPN medium power transistors

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

45 V, 1 A NPN medium power transistor

45 V, 1 A NPN medium power transistors

文件：299.68 Kbytes Page：22 Pages

45 V, 1 A NPN medium power transistors

NPN Plastic-Encapsulate Transistors

文件：480.43 Kbytes Page：5 Pages

45 V, 1 A NPN medium power transistors

文件：160.55 Kbytes Page：15 Pages

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

45 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

45 V, 1 A NPN medium power transistors

45 V, 1 A NPN medium power transistors

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BCP54-10T/SOT223/SC-73 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 45V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 q

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified

45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

45 V, 1 A NPN medium power transistors

文件：299.68 Kbytes Page：22 Pages

45V/60V/80V, 1A NPN medium power transistors

文件：1.40285 Mbytes Page：14 Pages