PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching and Amplification.

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • For Complementary With NPN Type BC846W/847W/848W

丝印代码：3M-；PNP general purpose transistors

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

PNP General Purpose Transistor

■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts CURRENT 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series • In compliance with EU RoHS 2002/95/EC directives

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

丝印代码：3M；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 65 V).

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Ideally suited for automatic insertion. ● Power dissipation.(PC=200mW) APPLICATIONS ● General purpose switching and amplification application.

PNP general purpose transistors

PNP transistor in a SOT323 plastic package.\n NPN complements: BC846W, BC847W and BC848W. • Low current (max. 100 mA)\n• Low voltage (max. 65 V).\n• AEC-Q101 qualified;

PNP Silicon Epitaxial Planar Transistor

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PNP Silicon Epitaxial Planar Transistor

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Silicon PNP transistor in a SOT-323 Plastic Package

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PNP Transistors

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丝印代码：3M-；PNP general purpose transistors

EPITAXIAL PLANAR PNP TRANSISTOR

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Surface Mount General Purpose Si-Epi-Planar Transistors

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丝印代码：3M；65 V, 100 mA PNP general-purpose transistors

1. General description PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEDEC NPN complement BC856W-Q BC846W-Q BC856AW-Q BC846AW-Q BC856BW-Q BC846BW-Q BC857W-Q BC847W-Q BC

65 V, 100 mA PNP general-purpose transistors

PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n JEDEC\n BC856W-Q\n SOT323\n SC-70\n BC846W-Q\n BC856AW-Q\n BC846AW-Q\n BC85 • Low current (max. 100 mA)\n• Low voltage (max. 65 V)\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo