PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN)

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846AW – BC848CW) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101

PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Pb Lead(Pb)-Free

BC856AW

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications * Operating Temp. : -55°C ~ +150°C

PNP General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Ideally Suited for Automatic Insertion • Complementary PNP Silicon Types Available • For Switching and AF Amplifier Applications • Epoxy meets UL 94 V-0 flammability rating • Moisure S

丝印代码：3J；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

SMD General Purpose PNP Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

100 mA, 30V PNP Bipolar Junction Transistor

The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications. • Device Marking:BC856AWT1 = 3ABC856BWT1 = 3BBC857AWT1 = 3EBC857BWT1 = 3FBC858AWT1 = 3JBC858BWT1 = 3KBC858CWT1 = 3L\n• Pb-Free Packages are Available\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable;

丝印代码：3J；PNP Silicon Epitaxial Planar Transistor

文件：1.06616 Mbytes Page：5 Pages

PNP General Purpose Transistors

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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846AW – BC848CW) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101

Small Signal Transistor

Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and

General Purpose Transistor

Features - Ideally suited for automatic insertion. - For switching and AF amplifier applications.

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

CASE 419-02, STYLE 3 SOT-323/SC-70

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：3J；PNP Silicon Epitaxial Planar Transistor

文件：1.06616 Mbytes Page：5 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Small Signal Bipolar Transistors

Small Signal Transistor

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo