NPN SILICON PLANAR EPITAXIAL TRANSISTORS

For use in Driver Stages of Audio Amplifier in Thick and Thin-film Hybrid Circuits

丝印代码：1Ls；NPN Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856 – BC858 • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for H

Surface mount Si-Epitaxial PlanarTransistors

General Purpose Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Small Signal Transistor 310mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: 0.225W (Tamb=25°C)(Note 1) • Collector Current: 0.1A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

0.2 Watts NPN Plastic-Encapsulate Transistors

Features ♦ Epitaxial planar die construction ♦ Surface device type mounting ♦ Moisture sensitivity level 1 ♦ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ♦ Pb free version and RoHS compliant ♦ Green compound (Halogen free) with suffix G on packing code and prefix G on dat

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model:>4000V - Machine Model:>400V

NPN general purpose Transistor

FEATURES • High current gain. • Excellent hFE linearity . • Low noise between 30Hz and 15kHz. • For AF input stages and driver applications. APPLICATIONS • General purpose switching and amplification.

SMD NPN Transistor

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V • Epitaxial plana chip construction • Ideal for medium power application and switching • As complementary type, the PNP transistor

丝印代码：1L；Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The typ

TRANSISTOR (NPN)

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

General Purpose Transistors

General Purpose Transistors NPN Silicon

丝印代码：1L；Epoxy meets UL-94 V-0 flammability rating

NPN Silicon Epitaxial Transistor for switching and amplifier applications

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Pb free product are available : 99 Sn above can meet Rohs environment substance directive request

NPN general purpose Transistor

FEATURES • High current gain. • Excellent hFE linearity . • Low noise between 30Hz and 15kHz. • For AF input stages and driver applications. APPLICATIONS • General purpose switching and amplification.

BC846A

FEATURES • Collect current : 0.1A • General Purpose Transistor NPN Type • RoHS compliant product • Operating Temp. : -55OC ~ +150OC

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

NPN Silicon AF Transistors Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP)

SMD General Purpose Transistor (NPN)

Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Epitaxial Die Construction • Ideally Suited for Automatic Insertion • 310 mW Power Dissipation • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications

GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available • For switching and AF Amplifier • RoHS compliant package

General Purpose Transistors

General Purpose Transistors NPN Silicon

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

丝印代码：1L；TRANSISTOR (NPN)

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

丝印代码：1L；TRANSISTOR (NPN)

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

丝印代码：1L；Ideally suited for automatic insertion

FEATURE Ideally suited for automatic insertion For Switching and AF Amplifier Applications

AF 通用晶体管

NPN硅AF晶体管 • 高电流增益\n• 30 Hz 至 15 kHz 之间的低噪声\n• 无铅（符合 RoHS 标准）封装\n• 1BC847BL3 不符合 AEC Q101 标准;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 30V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：1L；NPN Plastic-Encapsulate Transistors

文件：1.35798 Mbytes Page：5 Pages

丝印代码：1G；NPN Silicon Epitaxial General Purpose Transistors

文件：1.84399 Mbytes Page：13 Pages

丝印代码：1L；NPN general purpose Transistor

文件：2.06563 Mbytes Page：4 Pages

丝印代码：1K；NPN Transistors

文件：704.82 Kbytes Page：4 Pages

NPN Transistors

文件：1.66599 Mbytes Page：3 Pages

NPN Small Signal Transistor

文件：218.99 Kbytes Page：5 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件：456.22 Kbytes Page：2 Pages

丝印代码：1L；Ideally suited for automatic insertion

文件：450.11 Kbytes Page：6 Pages

NPN Plastic-Encapsulate Transistors

文件：226.31 Kbytes Page：2 Pages

SMD General Purpose NPN Transistors

文件：144.84 Kbytes Page：2 Pages

丝印代码：1Ls；NPN Silicon AF Transistors

文件：183.85 Kbytes Page：19 Pages

NPN general purpose Transistor

文件：220 Kbytes Page：6 Pages

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：345.56 Kbytes Page：2 Pages

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856 – BC858 • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for H

NPN/NPN Matched Double Transistors

Features • Low Collector Emitter Saturation Voltage • Halogen and Antimony Free(HAF), RoHS compliant Applications • General purpose and switching applications

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

General Purpose Transistor NPN Duals

General Purpose Transistor NPN Duals

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

General Purpose Transistor

Features - High current gain. - Excellent hFE linearity. - Low noise between 30Hz and 15Hz. - For AF input stages and driver applications.

GENERAL PURPOSE TRANSISTORS NPN SILICON

DESCRIPTION The BC846 AL /BL A 8 4 7 8 4 8 A L / CL are available in SOT 23 p ackage. FEATURES ⚫ H ig h current gain ⚫ E xcellent h FE linearity ⚫ L ow noise between 30Hz and 15k H z ⚫ F or A F input stages and driver applications ⚫ Availabl e in SOT 23 p ackage A PPL ICATIONS ⚫ G e

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon