NPN/NPN Matched Double Transistors

Features • Low Collector Emitter Saturation Voltage • Halogen and Antimony Free(HAF), RoHS compliant Applications • General purpose and switching applications

TRANSISTOR

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

General Purpose Transistor NPN Duals

General Purpose Transistor NPN Duals

双 NPN 双极晶体管

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications. • Device Marking:BC846BDW1T1 = 1BBC847BDW1T1 = 1FBC847CDW1T1 = 1GBC848BDW1T1 = 1KBC848CDW1T1 = 1L\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable;

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating

丝印代码：1G；NPN Silicon Epitaxial General Purpose Transistors

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Dual General Purpose Transistors

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Transistors

Dual General Purpose Transistors

文件：110.48 Kbytes Page：11 Pages

Dual General Purpose Transistors

文件：102.11 Kbytes Page：5 Pages

Dual General Purpose Transistors

文件：102.11 Kbytes Page：5 Pages

Dual General Purpose Transistors

文件：138.67 Kbytes Page：5 Pages

Dual General Purpose Transistors

文件：102.11 Kbytes Page：5 Pages

Dual General Purpose Transistors

文件：102.11 Kbytes Page：5 Pages

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Epitaxial Die Construction • Ideally Suited for Automatic Insertion • 310 mW Power Dissipation • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications

GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

丝印代码：T106；NPN General Purpose Transistor

Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching