NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC808. ● High collector current, high current gain. ● Low collector-emitter saturation voltage. APPLICATIONS ● General purpose medium power amplifier.

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)