NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC808. ● High collector current, high current gain. ● Low collector-emitter saturation voltage. APPLICATIONS ● General purpose medium power amplifier.

NPN Silicon AF Transistor

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

NPN Silicon General Purpose Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 30V • Operating and storage junct

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

SMD General Purpose NPN Transistors

文件：153.05 Kbytes Page：2 Pages

NPN General Purpose Amplifier

文件：1.05939 Mbytes Page：2 Pages

NPN Silicon Epitaxial Planar Transistors

文件：276.01 Kbytes Page：3 Pages

NPN Silicon General Purpose Transistors

文件：303.84 Kbytes Page：3 Pages

For general AF applications

文件：102.39 Kbytes Page：2 Pages

NPN Transistors

文件：1.08113 Mbytes Page：4 Pages

NPN General Purpose Amplifier

文件：161.97 Kbytes Page：4 Pages

For general AF applications

文件：102.39 Kbytes Page：2 Pages

小信号三极管

Bipolar Transistors

NPN general purpose transistor

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BC807W,BC808W. APPLICATIONS ● General purpose switching and amplification application.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807W, BC808W (PNP)

NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN Silicon AF Transistor (For general AF applications High collector current High current gain)

NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP)