NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

NPN Silicon AF Transistor

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

NPN Silicon General Purpose Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 30V • Operating and storage junct

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC808. ● High collector current, high current gain. ● Low collector-emitter saturation voltage. APPLICATIONS ● General purpose medium power amplifier.

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

小信号三极管

Bipolar Transistors

丝印代码：6F；NPN General Purpose Amplifier

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For general AF applications

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For general AF applications

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NPN Silicon Epitaxial Planar Transistors

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NPN Transistors

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NPN General Purpose Amplifier

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NPN Silicon General Purpose Transistors

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SMD General Purpose NPN Transistors

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NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807W, BC808W (PNP)

NPN general purpose transistor

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BC807W,BC808W. APPLICATIONS ● General purpose switching and amplification application.

NPN Silicon AF Transistor (For general AF applications High collector current High current gain)

NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP)