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BC55晶体管资料
BC550(B,C)别名:BC550(B,C)三极管、BC550(B,C)晶体管、BC550(B,C)晶体三极管
BC550(B,C)生产厂家:德国AEG公司_德国椤茨标准电器公司_英国Mullard有限
BC550(B,C)制作材料:Si-NPN
BC550(B,C)性质:通用型 (Uni)_低噪放大 (ra)
BC550(B,C)封装形式:直插封装
BC550(B,C)极限工作电压:50V
BC550(B,C)最大电流允许值:0.2A
BC550(B,C)最大工作频率:300MHZ
BC550(B,C)引脚数:3
BC550(B,C)最大耗散功率:0.5W
BC550(B,C)放大倍数:β=900
BC550(B,C)图片代号:A-23
BC550(B,C)vtest:50
BC550(B,C)htest:300000000
- BC550(B,C)atest:0.2
BC550(B,C)wtest:0.5
BC550(B,C)代换 BC550(B,C)用什么型号代替:BC184,BC384,BC414,3DG120D,
BC55价格
参考价格:¥0.0873
型号:BC550BA1 品牌:Taiwan Semi 备注:这里有BC55多少钱,2025年最近7天走势,今日出价,今日竞价,BC55批发/采购报价,BC55行情走势销售排行榜,BC55报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BC55 | 01845 NORTH ANDOVER, MA 45 BEECHWOOD DRIVE ADAPTER BNC F/TINNED LEADS (2) | L-COM 英飞畅 | ||
01845 NORTH ANDOVER, MA 45 BEECHWOOD DRIVE ADAPTER BNC F/TINNED LEADS (2) | L-COM 英飞畅 | |||
NPN general purpose transistors DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. | Philips 飞利浦 | |||
NPN Silicon Transistors NPN Silicon Transistors | SIEMENS 西门子 | |||
NPN EPITAXIAL SILICON TRANSISTOR Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER) LOW NOISE AMPLIFIER APPLICATION. FEATURE • For Complementary with PNP Type BC559/560. | KEC KEC(Korea Electronics) | |||
NPN SILICON RF SMALL SIGNAL TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR | MICRO-ELECTRONICS | |||
NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. | SEMTECH_ELEC 先之科半导体 | |||
NPN general purpose transistors | ETC 知名厂家 | ETC | ||
Switching and Applications Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
Switching and Applications Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 | Fairchild 仙童半导体 | |||
Switching and Applications Switching and Applications Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T | CDIL | |||
Switching and Applications Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
Switching and Amplifier Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | ONSEMI 安森美半导体 | |||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T | CDIL | |||
NPN Transistor Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups A, B and C according to their current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) w | TSC 台湾半导体 | |||
Low Noise Transistors Low Noise Transistors NPN Silicon | Motorola 摩托罗拉 | |||
NPN Silicon Transistors NPN Silicon Transistors | SIEMENS 西门子 | |||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T | CDIL | |||
NPN Transistor Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups A, B and C according to their current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) w | TSC 台湾半导体 | |||
NPN general purpose transistors DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. | Philips 飞利浦 | |||
Low Noise Transistors Low Noise Transistors NPN Silicon | Motorola 摩托罗拉 | |||
NPN Silicon Transistors NPN Silicon Transistors | SIEMENS 西门子 | |||
NPN Transistor Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups A, B and C according to their current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) w | TSC 台湾半导体 | |||
Switching and Amplifier Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T | CDIL | |||
Low Noise Transistors NPN Silicon Low Noise Transistors NPN Silicon Features • These are Pb−Free Devices* | ONSEMI 安森美半导体 | |||
NPN general purpose transistors | ETC 知名厂家 | ETC | ||
Switching and Applications Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
Switching and Amplifier Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | ONSEMI 安森美半导体 | |||
Low Noise Transistors NPN Silicon Low Noise Transistors NPN Silicon Features • These are Pb−Free Devices* | ONSEMI 安森美半导体 | |||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 | Fairchild 仙童半导体 | |||
Switching and Amplifier Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | Fairchild 仙童半导体 | |||
NPN Epitaxial Silicon Transistor Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 | ONSEMI 安森美半导体 | |||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qualified | NEXPERIA 安世 | |||
60 V, 1 A NPN medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | |||
45V/60V/80V, 1A NPN medium power transistors Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond | NEXPERIA 安世 | |||
60 V, 1 A NPN medium power transistors 1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa | NEXPERIA 安世 | |||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qualified | NEXPERIA 安世 | |||
60 V, 1 A NPN medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | |||
45V/60V/80V, 1A NPN medium power transistors Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond | NEXPERIA 安世 | |||
60 V, 1 A NPN medium power transistors 1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa | NEXPERIA 安世 | |||
Amplifier Transistors(PNP Silicon) Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | |||
PNP general purpose transistors DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546, BC547 and BC548. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. | Philips 飞利浦 | |||
Amplifier Transistors Amplifier Transistors PNP Silicon | Motorola 摩托罗拉 | |||
PNP Silicon Epitaxial Planar Transistor for switching and AF applications??? PNP Silicon Epitaxial Planar Transistor for switching and AF applications. | SEMTECH 先之科 | |||
Small Signal Transistors (PNP) REATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is avail able in groups A and B, however, the types BC557 and BC558 | GE | |||
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • For Complementary With NPN Type BC546/547/548. | KEC KEC(Korea Electronics) | |||
PNP Silicon Amplifier Transistor 625mW Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • 150°C Junction Temperature • Through Hole Package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:Type Number • Halogen free available upon request | MCC | |||
PNP SILICON AF SMALL SIGNAL TRANSISTOR PNP SILICON AF SMALL SIGNAL TRANSISTORS | MICRO-ELECTRONICS | |||
Si-Epitaxial PlanarTransistors General Purpose PNP Transistors • Power dissipation 500 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack | Diotec 德欧泰克 | |||
Switching and Amplifier Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 | Fairchild 仙童半导体 | |||
PNP General Purpose Transistor PNP General Purpose Transistor | WEITRON | |||
SWITCHING AND AMPLIFIER APPLICATIONS SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V | UTC 友顺 | |||
PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications These transistors are subdivided into three groups A, B and C according to their current gain. | SEMTECH_ELEC 先之科半导体 |
BC55产品属性
- 类型
描述
- 型号
BC55
- 功能描述
两极晶体管 - BJT NPN 45V 100mA HFE/8
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-92 |
32000 |
ONSEMI/安森美全新特价BC559CTA即刻询购立享优惠#长期有货 |
|||
原厂 |
25+ |
1590 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
DIOTEC |
23+ |
TO-92 |
8860 |
受权代理!全新原装现货特价热卖! |
|||
PHI |
05+ |
原厂原装 |
62 |
只做全新原装真实现货供应 |
|||
MICROCHIP/微芯 |
2025+ |
TO-92 |
5000 |
原装进口价格优 请找坤融电子! |
|||
FAIRCHILDSEM |
2025+ |
TO-92-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
PHI |
TO92 |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
CJ/长电 |
23+ |
TO-92 |
65000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
VISHAY |
DIP |
30000 |
一级代理 原装正品假一罚十价格优势长期供货 |
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CSR |
24+ |
BGA |
17860 |
公司现货库存,支持实单 |
BC55芯片相关品牌
BC55规格书下载地址
BC55参数引脚图相关
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC639(-6...-10)
- BC638(-6...-10)
- BC637(-6...-10)
- BC636(-6...-16)
- BC635(-6...-16)
- BC618
- BC617
- BC612L
- BC612
- BC586
- BC585
- BC584(B,C)
- BC583(A,B,C)
- BC582(A,B)
- BC560(A,B,C)
- BC559(A,B,C)
- BC558C
- BC558B
- BC558A
- BC558(VI,A,B,C)
- BC558
- BC557CG
- BC557C
- BC557BG
- BC557B
- BC557A
- BC557(VI,A,B)
- BC557
- BC556C
- BC556BG
- BC556B
- BC556A
- BC556(VI,A,B)
- BC556
- BC550CG
- BC550C
- BC550B
- BC550A
- BC550(B,C)
- BC550
- BC54PAS
- BC54PA
- BC549CG
- BC549C
- BC549B
- BC549A
- BC549(B,C)
- BC549
- BC548CG
- BC548C
- BC548BU
- BC548BG
- BC548B
- BC548A
- BC548(VI,A,B,C)
- BC548
- BC547CG
- BC547C
- BC547BG
- BC547B
- BC547A
- BC547(VI,A,B,C)
- BC547
- BC546(VI,A,B)
- BC538(-6...-25)
- BC537(-6...-25)
- BC535
- BC534
- BC533
- BC532
- BC531
- BC530
- BC529
- BC528(-6...-25)
- BC527(-6...-25)
- BC526(A,B,C)
- BC525
- BC524(B,C)
- BC523(B,C)
- BC522(C,D,E)
BC55数据表相关新闻
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BC57E687C-GITB-E4
2020-3-31BC807-16信号晶体管全新原装
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2019-11-16BC-2600顶装CR2032锂电池固定器BC-2600
MPD 的 BC-2600 适用于 20 mm 直径电池,可提供垂直更换功能
2019-9-5BC57E687C-GITB-E4
BC57E687C-GITB-E4,全新原装当天发货或门市自取0755-82732291.
2019-8-22BC10-工业控制IC
BC10和BC20无刷直流电动机控制器提供必要的功能来控制传统的3相无刷直流电动机开环或闭环系统。 BC10能控制需要连续输入功率1千瓦的电动机;BC20是需要高达10千瓦,能够控制更大的马达连续输入功率。两个控制器驱动马达,产生PWM,解码减刑模式,多路电流检测,并提供误差放大。操作60 °或120°减刑一个逻辑输入模式可以选择。电流检测的复用是用来做目前显示器总是积极电机线圈的电流成正比的输出。因此,可用于产生电流监视器输出跨导驱动器,便于伺服补偿。控制器可能产生的应用四象限PWM需要通过零速度,或2象限连续过渡电气安静单向应用操作的PWM。2象限模式的旋转方向可能逆转使用反向命令的输入。
2012-12-4
DdatasheetPDF页码索引
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