45 BEECHWOOD DRIVE NORTH ANDOVER, MA 01845

TEST CABLE;BNC PLUG/BANANA PLUGS

LPWA IoT 模组

BC30 是一款高性能、低功耗、多频段的 NB-IoT 无线通信模块。其尺寸仅为 16.0mm × 18.0mm × 2.0mm，能最大限度地满足终端设备对小尺寸通信模块的需求，同时可有效帮助客户减小其产品尺寸并优化产品成本。BC30 在设计上符合《中国移动蜂窝物联网通用模组技术规范》, 支持中国移动 OneNET 物联网云平台，并提供丰富的外部接口和协议栈，为客户的应用提供极大的便利。\n\n BC30 采用更易于焊接的 LCC 封装，可通过标准 SMT 设备实现模块的快速生产，为客户提供可靠的连接方式，以满足复杂环境下的应用需求。\n\n 凭借紧凑的尺寸、超低功耗和超宽 •尺寸紧凑的 NB-IoT 无线通信模块•LCC 封装，超低功耗、超高灵敏度•多频段及丰富外部接口，应用便利•封装设计符合中国移动技术规范•内嵌网络服务协议栈•通过提供参考设计、评估板和及时的技术支持可满足客户产品快速上市的要求;

丝印代码：BC307；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

丝印代码：BC307；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

丝印代码：BC308；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

丝印代码：BC308；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

丝印代码：BC309；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

丝印代码：BC309；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN EPITAXIAL PLANAR SILICON TRANSISTORS

NPN EPITAXIAL PLANAR SILICON TRANSISTORS NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.

Small Signal Transistors

Small Signal Transistors

NPN EPITAXIAL PLANAR SILICON TRANSISTORS

NPN EPITAXIAL PLANAR SILICON TRANSISTORS NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

NPN EPITAXIAL PLANAR SILICON TRANSISTORS

NPN EPITAXIAL PLANAR SILICON TRANSISTORS NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.

Small Signal Transistors

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

Small Signal Transistors

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Small Signal Transistors

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose switching and amplifier applications. Pinning 1 = Collector 2 = Base 3 = Emitter

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

PNP general purpose transistors

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC237 and BC237B. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). • For Complementary With NPN type BC237/238/239.

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

PNP general purpose transistors

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC237 and BC237B. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors PNP Silicon

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). • For Complementary With NPN type BC237/238/239.

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309