PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). • For Complementary With NPN type BC237/238/239.

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications

TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

PNP Epitaxial Silicon Transistor

文件：181.39 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS PNP 25V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS PNP 25V 0.1A TO-92

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

TO-92 Plastic-Encapsulate Transistors

文件：642.52 Kbytes Page：3 Pages

TO-92 PACKAGE

文件：30.91 Kbytes Page：1 Pages

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

TO-92 PACKAGE

文件：30.91 Kbytes Page：1 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS PNP 25V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS PNP 25V 0.1A TO-92

TRANS PNP 25V 0.1A TO-92

Amplifier Transistors(PNP Silicon)

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2 (50.8 mm) Single Turn Conductive Plastic Precision Potentiometer

FEATURES • Bushing mount and servo mount types available • Virtually infinite resolution • Up to 6 sections available • Rotational life exceeds 20 million shaft revolutions • Co-molded track and multi-finger wiper provide low noise signal • Large ohmic value range: 500  to 100 k • Mater

Compact, Portable Military Fast Ethernet Switch

FEATURES Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. The MILTECH 308’s ultra-compact, IP68 rugged construction, and Fast Ethernet make it the ideal switching

GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz

General Description The HMC308 & HMC308E are low cost MESFET MMIC amplifiers that operate from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifi er stage or used with external matching for optimized narrow band applications. Wi

Wiha SoftFinish®. The Specialist for Dry & General Applications.

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Test insulation to 2000M廓

文件：117.75 Kbytes Page：1 Pages