PNP SILICON TRANSISTORS

PNP Silicon Transistors BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use in AF input driver stages.

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,BC178 and BC179 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to

SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Transistor

UHF variable capacitance diode

DESCRIPTION The BB179 is a planar technology variable capacitance diode, in a SOD523 (SC-79) package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Ultra small plastic

NPN SILICON TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ NPN transistor Applications ■ General purpose switching

Silicon epitaxial planar type

Silicon epitaxial planar type For high-speed switching circuits ■ Features • Large repetitive peak forward current IFRM • Small terminal capacitance Ct

Germanium PNP Transistor Audio Power Amplifier, High Current Switch

Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: • Low Collector–Emitter Saturation Voltage: VCE(sat

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE