Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Built in ESD absorbing

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing

Transistors>Amplifiers/MOSFETs

Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Built in ESD absorbing

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

POSITIVE VOLTAGE STABILIZED POWER SUPPLY

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

POSITIVE VOLTAGE STABILIZED POWER SUPPLY

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Voltage Regulators

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