Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes Applications     General purposes

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diodes • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diodes • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

Switching Diode

Features ♦ Silicon Epitaxial Planar Diodes Applications ♦ General purposes

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives

SILICON EPITAXIAL PLANAR DIODES

Switching Diode Applications: General Purposes

SURFACE MOUNT SWITCHING DIODE

Features • Fast Switching Speed • Surface Mount Package Ideally Suited for Automatic Insertion • For General Purpose Switching Applicaions • High Conductance • Outline Similar to JEDEC 213AA

SURFACE MOUNT FAST SWITCHING DIODE

Features • Silicon Epitaxial Planar Diodes

小信号开关二极管

分立

250V Detection switch tube

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HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

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Small Signal Switching Diodes, High Voltage

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Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diodes • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diodes • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

封装/外壳：SOD-80 变式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 250MA SOD80 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-80 变式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 250MA SOD80 分立半导体产品 二极管 - 整流器 - 单

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.