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BAV10价格
参考价格:¥0.2037
型号:BAV100 品牌:Taiwan Semi 备注:这里有BAV10多少钱,2025年最近7天走势,今日出价,今日竞价,BAV10批发/采购报价,BAV10行情走势销售排行榜,BAV10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| BAV10 | Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
| BAV10 | Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
| BAV10 | Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
| BAV10 | High-speed diode DESCRIPTION The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6 ns • General application • C | Philips 飞利浦 | ||
| BAV10 | HIGH SPEED SWITCHING DIODE FEATURES : • High switching speed: max. 6 ns • General application • Continuous reverse voltage:max. 60 V • Repetitive peak reverse voltage:max. 60 V • Repetitive peak forward current: max. 600 mA * Pb / RoHS Free | SYNSEMI | ||
| BAV10 | HIGH SPEED SWITCHING DIODE 文件:82.16 Kbytes Page:2 Pages | EIC | ||
| BAV10 | Diodes Switching | SYNSEMI | ||
| Small Signal Diodes Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi | MCC | |||
| HIGH SPEED SILICON DIODES Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,Digital Voltmeters and Video Output Stages in Colour Television | CDIL | |||
| Silicon Epitaxial Planar Diodes Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the | GE | |||
| Ultrafast Switching Surface Mount Si-Rectifiers Superfast Recovery SMD Rectifier Diodes Features Package compatible to SOD-87 High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Rectification of higher frequencies, High speed switching Commercial grade 1) Mechanical Data 1) | Diotec 德欧泰克 | |||
| Ultrafast silicon rectifier diodes Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel | Semikron 赛米控丹佛斯 | |||
| SMALL SIGNAL SWITCHING DIODE VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams | BILIN 银河微电 | |||
| 500mW Hermetically Sealed Glass High Voltage Switching Diodes Features ● High Voltage Switching Device ● Mini Melf package ● Surface device type mounting ● Hermetically sealed glass ● Compression bonded construction ● All external surface are corrosion resistant and leads are readily solderable ● RoHS compliant ● Matte Tin (Sn | TSC 台湾半导体 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH | SYNSEMI | |||
| General purpose diodes DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. FEATURES • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuou | Philips 飞利浦 | |||
| HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH | EIC | |||
| Small Signal Diodes Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi | MCC | |||
| Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| General purpose diodes DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. FEATURES • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuou | Philips 飞利浦 | |||
| Silicon Epitaxial Planar Diodes Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| SURFACE MOUNT SWITCHING DIODE Features ● Case: MiniMELF, Glass ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Marking: Cathode Band Only ● Weight: 0.05 grams (approx.) Mechanical Data ● Fast Switching Speed ● Surface Mount Package Ideally Suited for Automatic Insertion ● For General Pur | DIODES 美台半导体 | |||
| Ultrafast Switching Surface Mount Si-Rectifiers Superfast Recovery SMD Rectifier Diodes Features Package compatible to SOD-87 High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Rectification of higher frequencies, High speed switching Commercial grade 1) Mechanical Data 1) | Diotec 德欧泰克 | |||
| Ultrafast silicon rectifier diodes Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel | Semikron 赛米控丹佛斯 | |||
| HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | |||
| 500mW Hermetically Sealed Glass High Voltage Switching Diodes Features ● High Voltage Switching Device ● Mini Melf package ● Surface device type mounting ● Hermetically sealed glass ● Compression bonded construction ● All external surface are corrosion resistant and leads are readily solderable ● RoHS compliant ● Matte Tin (Sn | TSC 台湾半导体 | |||
| SMALL SIGNAL SWITCHING DIODE VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams | BILIN 银河微电 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Diodes Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi | MCC | |||
| SILICON EPITAXIAL PLANAR DIODES SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes | SEMTECH_ELEC 先之科半导体 | |||
| HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH | EIC | |||
| HIGH SPEED SILICON DIODES Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,Digital Voltmeters and Video Output Stages in Colour Television | CDIL | |||
| Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the | GE | |||
| HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH | SYNSEMI | |||
| SWITCHING DIODE Features · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications High Conductance | DAESAN | |||
| Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| Single general-purpose switching diodes | ETC 知名厂家 | ETC | ||
| SMALL SIGNAL SWITCHING DIODE VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams | BILIN 银河微电 | |||
| General purpose diodes DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. FEATURES • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuou | Philips 飞利浦 | |||
| Silicon Epitaxial Planar Diodes Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | |||
| High Voltage, General Purpose Diode General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 Surface Mount package. Placement of the Expansion Gap has no relationship to the location of the Cathode Terminal which is indicated by | Fairchild 仙童半导体 | |||
| Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the | GE | |||
| Ultrafast Switching Surface Mount Si-Rectifiers Superfast Recovery SMD Rectifier Diodes Features Package compatible to SOD-87 High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Rectification of higher frequencies, High speed switching Commercial grade 1) Mechanical Data 1) | Diotec 德欧泰克 | |||
| Ultrafast silicon rectifier diodes Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel | Semikron 赛米控丹佛斯 | |||
| HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | |||
| 500mW Hermetically Sealed Glass High Voltage Switching Diodes Features ● High Voltage Switching Device ● Mini Melf package ● Surface device type mounting ● Hermetically sealed glass ● Compression bonded construction ● All external surface are corrosion resistant and leads are readily solderable ● RoHS compliant ● Matte Tin (Sn | TSC 台湾半导体 | |||
| SILICON EPITAXIAL PLANAR DIODES SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes | SEMTECH_ELEC 先之科半导体 | |||
| HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH | SYNSEMI | |||
| HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH | EIC | |||
| Small Signal Diodes Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi | MCC | |||
| HIGH SPEED SILICON DIODES Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,Digital Voltmeters and Video Output Stages in Colour Television | CDIL | |||
| SURFACE MOUNT SWITCHING DIODE Features ● Case: MiniMELF, Glass ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Marking: Cathode Band Only ● Weight: 0.05 grams (approx.) Mechanical Data ● Fast Switching Speed ● Surface Mount Package Ideally Suited for Automatic Insertion ● For General Pur | DIODES 美台半导体 | |||
| Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purposes | VishayVishay Siliconix 威世威世科技公司 | 
BAV10产品属性
- 类型描述 
- 型号BAV10 
- 制造商SYNSEMI 
- 制造商全称SYNSEMI 
- 功能描述HIGH SPEED SWITCHING DIODE 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| 恩XP | 24+ | 标准封装 | 17468 | 全新原装正品/价格优惠/质量保障 | |||
| Vishay(威世) | 24+ | 标准封装 | 16048 | 原厂直销,大量现货库存,交期快。价格优,支持账期 | |||
| VISHAY | 24+ | LL34 | 80000 | 只做自己库存 全新原装进口正品假一赔百 可开13%增 | |||
| VISHAY/威世 | 25+ | SMD | 32000 | VISHAY/威世全新特价BAV103-GS08即刻询购立享优惠#长期有货 | |||
| VISHAY/威世 | 25+ | LL34 | 50000 | 原装正品,假一罚十! | |||
| VISHAY/威世 | 2450+ | SOD-80MiniMELF | 9850 | 只做原厂原装正品现货或订货假一赔十! | |||
| VISHAY/威世 | 00+ | LL34 | 300 | ||||
| VISHAY/威世 | 23+ | LL34 | 15000 | 代理原装现货,价格优势 | |||
| VISHAY | 24+ | 1206 | 9800 | 一级代理/全新原装现货/长期供应! | |||
| VISHAY | ROHS | 56520 | 一级代理 原装正品假一罚十价格优势长期供货 | 
BAV10规格书下载地址
BAV10参数引脚图相关
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