Silicon Epitaxial Planar Diodes

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

High Voltage, General Purpose Diode

General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 Surface Mount package. Placement of the Expansion Gap has no relationship to the location of the Cathode Terminal which is indicated by

Small Signal Diodes

FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the

Ultrafast Switching Surface Mount Si-Rectifiers

Superfast Recovery SMD Rectifier Diodes Features Package compatible to SOD-87 High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Rectification of higher frequencies, High speed switching Commercial grade 1) Mechanical Data 1)

Ultrafast silicon rectifier diodes

Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives

General purpose diodes

DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. FEATURES • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuou

Single general-purpose switching diodes

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●— High Voltage Switching Device —● Mini Melf package —● Surface device type mounting —● Hermetically sealed glass —● Compression bonded construction —● All external surface are corrosion resistant and leads are readily solderable —● RoHS compliant —● Matte Tin (Sn

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

Small Signal Diodes

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) ​​​​​​​• Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi

SURFACE MOUNT SWITCHING DIODE

Features ● Case: MiniMELF, Glass ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Marking: Cathode Band Only ● Weight: 0.05 grams (approx.) Mechanical Data ● Fast Switching Speed ● Surface Mount Package Ideally Suited for Automatic Insertion ● For General Pur

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

HIGH SPEED SILICON DIODES

Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,Digital Voltmeters and Video Output Stages in Colour Television

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

SWITCHING DIODE

Features · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications High Conductance

Single general-purpose switching diodes

Features and benefits * High switching speed: trr ≤ 50 ns * Low capacitance: Cd ≤ 5 pF * Low leakage current * Small hermetically sealed glass SMD package

150V Schottky diode

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150V Detection switch tube

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SMALL SIGNAL SWITCHING DIODE

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Superfast Switching Surface Mount Si-Diodes

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Hermetically Sealed Glass High Voltage Switching Diodes

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Superfast Recovery SMD Rectifier Diodes

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Phase Cut Dimmable Non-isolated Buck Converter for LED Retrofit Bulb with

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Small-Signal Diode

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MINI MELF Glass-Encapsulate Diodes

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Small Signal Swithcing diodes, High Voltage

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SMALL SIGNAL SWITCHING DIODE

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Small Signal Switching Diodes, High Voltage

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Single general-purpose switching diodes

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 150V 200MA LL34 分立半导体产品 二极管 - 整流器 - 单

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

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Ultrafast silicon rectifier diodes

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Silicon Epitaxial Planar Diodes

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Single general-purpose switching diodes

通用型高电压二极管

250mA Surface Mount Schottky Barrier Diode

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High Voltage, General Purpose Diode

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Small-Signal Diodes

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Small-Signal Diode Fast Switching Diodes

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Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：DIODE GEN PURP 150V 250MA LLDS 分立半导体产品 二极管 - 整流器 - 单

Single general-purpose switching diodes

High Voltage, General Purpose Diode

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Single general-purpose switching diodes

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Glass Passivated Chip Junction

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For surface mounted applications

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开关二极管

For surface mounted applications

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Details complets sur le site du fabricant:

Product Description Full details on the manufacturers website: IDEAL INDUSTRIES, INC

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

0.5/2.5 GHz UHF LO BUFFER AMPLIFIER

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co