General purpose diodes

DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. FEATURES • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuou

Silicon Epitaxial Planar Diodes

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

HIGH SPEED SILICON DIODES

Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,Digital Voltmeters and Video Output Stages in Colour Television

SURFACE MOUNT SWITCHING DIODE

Features ● Case: MiniMELF, Glass ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Marking: Cathode Band Only ● Weight: 0.05 grams (approx.) Mechanical Data ● Fast Switching Speed ● Surface Mount Package Ideally Suited for Automatic Insertion ● For General Pur

Ultrafast Switching Surface Mount Si-Rectifiers

Superfast Recovery SMD Rectifier Diodes Features Package compatible to SOD-87 High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Rectification of higher frequencies, High speed switching Commercial grade 1) Mechanical Data 1)

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

Small Signal Diodes

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) ​​​​​​​• Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi

Ultrafast silicon rectifier diodes

Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●— High Voltage Switching Device —● Mini Melf package —● Surface device type mounting —● Hermetically sealed glass —● Compression bonded construction —● All external surface are corrosion resistant and leads are readily solderable —● RoHS compliant —● Matte Tin (Sn

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams

SWITCHING DIODE

Features · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications High Conductance

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

Small Signal Diodes

FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives

小信号开关二极管

分立

100V Schottky diode

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100V Detection switch tube

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SMALL SIGNAL SWITCHING DIODE

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250mA Surface Mount Schottky Barrier Diode

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SMALL SIGNAL SWITCHING DIODE

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Hermetically Sealed Glass High Voltage Switching Diodes

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High Voltage Switching Diodes

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SMALL SIGNAL SWITCHING DIODE

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Small-Signal Diodes

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Small Signal Swithcing diodes, High Voltage

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丝印代码：T2；Silicon Epitaxial Planar Diodes

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Ultrafast silicon rectifier diodes

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Small-Signal Diode

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Small Signal Switching Diodes, High Voltage

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Superfast Switching Surface Mount Si-Diodes

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Superfast Recovery SMD Rectifier Diodes

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HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

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MINI MELF Glass-Encapsulate Diodes

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Small-Signal Diode Fast Switching Diodes

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Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR） 描述：DIODE GP 250V 200MA MINIMELF 分立半导体产品 二极管 - 整流器 - 单

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

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贴片稳压管

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：DIODE GEN PURP 100V 250MA SOD80 分立半导体产品 二极管 - 整流器 - 单

丝印代码：B101；Glass Passivated Chip Junction

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开关二极管

For surface mounted applications

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For surface mounted applications

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HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

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