Silicon Epitaxial Planar Diodes

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

SURFACE MOUNT SWITCHING DIODE

Features ● Case: MiniMELF, Glass ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Marking: Cathode Band Only ● Weight: 0.05 grams (approx.) Mechanical Data ● Fast Switching Speed ● Surface Mount Package Ideally Suited for Automatic Insertion ● For General Pur

Ultrafast Switching Surface Mount Si-Rectifiers

Superfast Recovery SMD Rectifier Diodes Features Package compatible to SOD-87 High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Rectification of higher frequencies, High speed switching Commercial grade 1) Mechanical Data 1)

Ultrafast silicon rectifier diodes

Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●— High Voltage Switching Device —● Mini Melf package —● Surface device type mounting —● Hermetically sealed glass —● Compression bonded construction —● All external surface are corrosion resistant and leads are readily solderable —● RoHS compliant —● Matte Tin (Sn

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams

General purpose diodes

DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. FEATURES • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuou

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

Small Signal Diodes

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) ​​​​​​​• Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi

Small Signal Diodes

FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

HIGH SPEED SILICON DIODES

Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,Digital Voltmeters and Video Output Stages in Colour Television

SWITCHING DIODE

Features · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications High Conductance

Small Signal Switching Diodes, High Voltage

FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes

100V Schottky diode

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100V Detection switch tube

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SMALL SIGNAL SWITCHING DIODE

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250mA Surface Mount Schottky Barrier Diode

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Superfast Switching Surface Mount Si-Diodes

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Ultrafast silicon rectifier diodes

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HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

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High Voltage Switching Diodes

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Small Signal Swithcing diodes, High Voltage

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Superfast Recovery SMD Rectifier Diodes

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Small-Signal Diodes

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SMALL SIGNAL SWITCHING DIODE

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Hermetically Sealed Glass High Voltage Switching Diodes

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SMALL SIGNAL SWITCHING DIODE

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Small-Signal Diode Fast Switching Diodes

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小信号开关二极管

Silicon Epitaxial Planar Diodes

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Small Signal Switching Diodes, High Voltage

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MINI MELF Glass-Encapsulate Diodes

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Small-Signal Diode

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Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR） 描述：DIODE GP 250V 200MA MINIMELF 分立半导体产品 二极管 - 整流器 - 单

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

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封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：DIODE GEN PURP 100V 250MA SOD80 分立半导体产品 二极管 - 整流器 - 单

开关二极管

For surface mounted applications

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Glass Passivated Chip Junction

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For surface mounted applications

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Smooth, high torque, roller ratchet handle

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Precision Wirewound Resistors

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