丝印代码：2M；Dual Schottky barrier diode

1. General description Planar dual Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

Dual Schottky barrier diode

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available. FEATURES • Very low forward voltage • Guard ring protected • Small

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available. FEATURES • Very low forward voltage • Guard ring protected • Small

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

Microcontroller with TrackPoint microcode from IBM

文件：81.75 Kbytes Page：12 Pages

Microcontroller with TrackPoint microcode from IBM

文件：81.75 Kbytes Page：12 Pages