Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available. FEATURES • Very low forward voltage • Guard ring protected • Small

Schottky barrier (double) diodes

Schottky barrier (double) diodes

Features Ultra high switching speed Guard ring protected Small plastic SMD package Low diode capacitance.

丝印代码：2N；Schottky barrier diodes

1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Low forward voltage  Low capacitance  AEC-Q101 qualified 1.3

Schottky barrier diodes

Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Low forward voltage\n• Low capacitance\n• AEC-Q101 qualified;

Dual Schottky barrier diode

Planar dual Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.

丝印代码：2N；Dual Schottky barrier diode

1. General description Planar dual Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 30V SOT23 分立半导体产品 二极管 - 整流器 - 阵列

Multi-Cal-System Evaluation Module

文件：2.52946 Mbytes Page：35 Pages

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available. FEATURES • Very low forward voltage • Guard ring protected • Small

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

Microcontroller with TrackPoint microcode from IBM

文件：81.75 Kbytes Page：12 Pages

Microcontroller with TrackPoint microcode from IBM

文件：81.75 Kbytes Page：12 Pages