肖特基二极管与整流器 Silicon Schottky Diodes 8V 130mA

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：DIODE SCHOTTKY 8V 150MW SOT323-3 分立半导体产品 二极管 - 射频

Silicon Schottky Diodes

文件：905.45 Kbytes Page：12 Pages

肖特基二极管与整流器 RF DIODE

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 8V 150MW SOT323-3 分立半导体产品 二极管 - 射频

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6804 is Pb-free (meets ROHS & Sony 259 specifications). Fea

20V Dual N-Channel MOSFET

General Description The AO6804A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS = 20V ID = 5.0A (VGS = 4.5V) RDS(ON)

DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

文件：175.78 Kbytes Page：3 Pages