Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

Schottky barrier double diodes

Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

Schottky barrier double diodes

Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

Schottky barrier double diodes

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

Schottky barrier double diodes

Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)

Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting (SMD)

Silicon Schottky Diode

• Low barrier diode for detectors up to GHz frequencies • Pb-free (RoHS compliant) package

EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board

The EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board is a versatile evaluation platform for the EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS family. It features a half bridge configuration, see Figure 1. There is the option to mount either the HybridPACK™ DSC IGBT module or a discrete P

Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

40 V, 0.75 A medium power Schottky barrier rectifier

1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.75 A • Reverse voltage: VR ≤ 40 V

SCHOTTKY BARRIER DIODE

Features • Medium current schottky rectifier diode Applications • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications

Schottky barrier double diodes

文件：192.04 Kbytes Page：7 Pages

Schottky barrier double diodes

文件：192.04 Kbytes Page：7 Pages

Schottky barrier double diodes

文件：192.04 Kbytes Page：7 Pages

Schottky barrier double diodes

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 60V SOT223 分立半导体产品 二极管 - 整流器 - 阵列

Schottky barrier double diodes

Schottky barrier double diodes

文件：192.04 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 60V SOT223 分立半导体产品 二极管 - 整流器 - 阵列

Schottky barrier double diodes

文件：192.04 Kbytes Page：7 Pages

Schottky barrier double diodes

文件：192.04 Kbytes Page：7 Pages

Schottky barrier double diode

Medium Power AF Schottky Diode

文件：69.86 Kbytes Page：6 Pages

Medium Power AF Schottky Diode

文件：69.86 Kbytes Page：6 Pages

40 V, 0.75 A medium power Schottky barrier rectifier

文件：683.3 Kbytes Page：13 Pages