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BAS4价格
参考价格:¥0.1820
型号:BAS40 品牌:Taiwan Semi 备注:这里有BAS4多少钱,2025年最近7天走势,今日出价,今日竞价,BAS4批发/采购报价,BAS4行情走势销售排行榜,BAS4报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
BAS4  | CASE 318-08, STYLE 8 SOT-23 TO-236AB Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where spa  | Motorola 摩托罗拉  | ||
BAS4  | Low-leakage diode DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 8  | Philips 飞利浦  | ||
BAS4  | SCHOTTKY array??SERIES DESCRIPTION Various configurations of Schottky barriers diodes in SOT-23 packages are provided for general-purpose use in high-speed switching, mixers and detector applications. They may also be used for signal terminations at the board level. This helps maintain signal integrity and counteract  | Microsemi 美高森美  | ||
BAS4  | Schottky Diodes FEATURES ♦ These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.  | GE  | ||
BAS4  | Silicon Schottky Diode Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)  | Infineon 英飞凌  | ||
BAS4  | CASE 318-08, STYLE 8 SOT-23 TO-236AB  | ETC 知名厂家  | ETC  | |
BAS4  | SCHOTTKY array™ SERIES  | Microchip 微芯科技  | ||
BAS4  | Silicon Schottky Diode  | Infineon 英飞凌  | ||
SCHOTTKY BARRIER DIODE SOT-23 Plastic-Encapsulate Diodes FEATURES ● Low Forward Voltage ● Fast Switching  | JIANGSU 长电科技  | |||
SCHOTTKY DIODES 120mA, 40V DESCRIPTION 120mA Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The BAS40 is available in SOT 23 p a ckage FEATURES ⚫ Low Turn-on Voltage ⚫ Fast Switching ⚫ Low forward current  | AITSEMI 创瑞科技  | |||
Schottky barrier double diodes DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BAS40, BAS40-04, BAS40-05 and BAS40-06 are encapsulated in a SOT23 small plastic SMD package. The BAS40-07 is encapsulat  | Philips 飞利浦  | |||
Surface Mount Schottky Barrier Diodes Features ● Low Turn–on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection Applications Fast switches in thick and thin film circuits  | VishayVishay Siliconix 威世威世科技公司  | |||
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwave package • ESA Qualification pending  | SIEMENS 西门子  | |||
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwave package • ESA Qualification pending  | SIEMENS 西门子  | |||
Schottky Diodes FEATURES ♦ These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.  | GE  | |||
Schottky Diodes ■ Features ● Low Forward Voltage ● Fast Switching  | KEXIN 科信电子  | |||
Surface Mount Schottky Barrier Diode Features Low Turn-on Voltage Low Forward Voltage - 0.5V(Max) @ IF= 30 mA Very Low Capacitance - Less Than 5.0pF @ 1V For high speed switching application, circuit protection  | DAESAN  | |||
SCHOTTKY DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃  | TEL  | |||
SURFACE MOUNT SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 40 Volts CURRENT 0.2 Ampers FEATURES • Fast switching speed • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC • High conductor • Pb free product : 99 Sn above can meet RoHS environment substanc  | PANJIT 強茂  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O  | WTE Won-Top Electronics  | |||
Surface mount schottky barrier diode Surface mount schottky barrier diode FEATURES ● Low turn-on voltage. ● Fast switching. ● PN Junction guard ring for transient and ESD protection. APPLICATIONS ● High speed switching applications. ● Circuit protecting. ● Voltage clamping.  | BILIN 银河微电  | |||
Surface Mount Schottky Barrier Diodes FEATURES • Low Turn-on Voltage • Low Forward Voltage • Very Low Capacitance Less Than 5.0pF @ 0V • For high speed switching application, circuit protection  | SECOS 喜可士  | |||
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE - 40 Volts CURRENT - 0.2 Ampere FEATURES * For general purpose applications * Low forward voltage drop. * Fast switching time. * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD).  | DCCOM 道全  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low forward voltage • Fast switching  | SEMTECH_ELEC 先之科半导体  | |||
General-purpose Schottky diodes  | ETC 知名厂家  | ETC  | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Description 200mA surface mount Schottky Barrier Diode in SOT23 package, offers low forward voltage drop and fast switching capability, designed with PN Junction Guard Ring for Transient and ESD Protection, totally lead-free finish and RoHS compliant, ”Green” device. Features and Benefits • Low  | DIODES 美台半导体  | |||
SCHOTTKY array??SERIES DESCRIPTION Various configurations of Schottky barriers diodes in SOT-23 packages are provided for general-purpose use in high-speed switching, mixers and detector applications. They may also be used for signal terminations at the board level. This helps maintain signal integrity and counteract  | Microsemi 美高森美  | |||
Surface mount Schottky-Barrier Single-/ Double-Diodes Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, High-speed switching, Polarity protection Commercial grade 1) Mechanical Data 1) Taped and re  | Diotec 德欧泰克  | |||
HiRel Silicon Schottky Diode Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)  | Infineon 英飞凌  | |||
Surface Mount Schottky Diode Voltage: 40 Volts Power: 200mW Features Low Turn-on Voltage Low Forward Voltage - 0.5V(Max) @ IF = 30 mA Very Low Capacitance - Less Than 5.0pF @ 1V For high speed switching application, circuit protection  | COMCHIP 典琦  | |||
Silicon Schottky Diode Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)  | Infineon 英飞凌  | |||
Surface Mount Schottky Barrier Diode 200 mWatt DESCRIPTION Various configurations of Schottky barrier’ s diodes in SOT-23 package are provided for general-purpose use in high-speed switching ,mixers and detector applications. They may also be used for signal integrity and counteract the transmission-line effects with (PC) board trances by cla  | MCC  | |||
SCHOTTKY DIODE FEATURES ● Low Forward Voltage ● Fast Switching  | HTSEMI 金誉半导体  | |||
Surface Mount Schottky Barrier Diodes Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limite  | WEITRON  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection  | DIODES 美台半导体  | |||
200mW, Low VF, SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix G means green compound (halogen-free)  | TSC 台湾半导体  | |||
SCHOTTKY DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃  | WINNERJOIN 永而佳  | |||
General-purpose Schottky diodes  | ETC 知名厂家  | ETC  | ||
Surface Mount Schottky Barrier Diode Features ◇ Low turn-on voltage ◇ Fast switching ◇ PN junction guard Ring for transient  | LUGUANG 鲁光电子  | |||
SCHOTTKY BARRIER DIODE DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. APPLICATIONS ● Ultra high-speed switching ● Voltage clamping ● Protection circuits. ● Blocking diodes.  | YEASHIN 亚昕科技  | |||
200mW Plastic-Encapsulate Schottky Barrier Diodes FEATURES ● Low Forward Voltage ● Fast Switching ● Moisture Sensitivity Level 1  | WILLAS 威伦电子  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 0m AMPERES 20 40 VOLTS DESCRIPTION These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand  | PACELEADER 霈峰  | |||
General-purpose diode for high-speed switching Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)  | Infineon 英飞凌  | |||
Plastic-Encapsulate Diodes Plastic-Encapsulate Diodes FEATURES • Low Forward Voltage • Fast Switching  | HOTTECH 合科泰  | |||
Schottky barrier diodes in a SOT-23 Plastic Package Descriptions Schottky barrier diodes in a SOT-23 Plastic Package. Features Low forward current, Low diode capacitance, small plastic SMD package. Applications Ultra high-speed switching, voltage clamping, protection circuits.  | FOSHAN 蓝箭电子  | |||
SCHOTTKY DIODE FEATURES Power dissipation PD(Ta=25℃) 225 mW Forward Current IF 100 mA Reverse Voltage VR 40 V Junction and Storage Temperature TJ,Tstg -55 to +150℃  | GSME 桂微  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES ● LOW TURN-ON VOLTAGE ● FAST SWITCHING ● PN JUNCTION GUARD RING FOR TRANSIENT AND ESD PROTECTION  | FRONTIER  | |||
Surface mount schottky barrier diode FEATURES ● Low turn-on voltage. ● Fast switching. ● PN Junction guard ring for transient and ESD protection. APPLICATIONS ● High speed switching applications. ● Circuit protecting. ● Voltage clamping.  | DSK  | |||
Low Forward Voltage Drop, Fast Switching FEATURES ● Low Forward Voltage Drop. ● Fast Switching. ● PN Junction Guard Ring for Transient and ESD Protection.  | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司  | |||
200mA Surface Mount Small Signal Diodes ■ Features • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex.BAS40G. • Le  | CITC 竹懋科技  | |||
SOT-23 Plastic-Encapsulate Diodes Features ● Low Forward Voltage ● Fast Switchi  | HDSEMI 海德半导体  | |||
General-purpose Schottky diode 1. General description General-purpose Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultr  | NEXPERIA 安世  | |||
SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Swit c h in g  | SY 顺烨电子  | |||
SCHOTTKY BARRIER DIODE Features High current capability  | DAESAN  | |||
SURFACE MOUNT SCHOTTKY DIODES FEATURES • Fast switching speed • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC • High conductor • Lead free in compliance with EU RoHS 2.0 • Green molding compound as per IEC 61249 standard  | PANJIT 強茂  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Single and Dual Diode Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0  | WTE Won-Top Electronics  | |||
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwave package • ESA Qualification pending  | SIEMENS 西门子  | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection  | DIODES 美台半导体  | |||
SURFACE MOUNT SCHOTTKY DIODES FEATURES • Fast switching speed • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC • High conductor • Lead free in compliance with EU RoHS 2.0 • Green molding compound as per IEC 61249 standard  | PANJIT 強茂  | |||
SURFACE MOUNT SCHOTTKY DIODES FEATURES • Fast switching speed • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC • High conductor • Lead free in compliance with EU RoHS 2.0 • Green molding compound as per IEC 61249 standard  | PANJIT 強茂  | 
BAS4产品属性
- 类型
描述
 - 型号
BAS4
 - 制造商
Thomas & Betts
 - 功能描述
Battery Terminal 4AWG Electro-Tin
 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
ON  | 
24+  | 
SMD  | 
15000  | 
全新正品现货供应特价库存  | 
|||
Infineon/英飞凌  | 
23+  | 
SOT-23-3  | 
12700  | 
买原装认准中赛美  | 
|||
恩XP  | 
23+  | 
SOD323  | 
5628  | 
原厂原装  | 
|||
ON(安森美)  | 
24+  | 
标准封装  | 
8000  | 
原厂原装,价格优势,欢迎洽谈!  | 
|||
VISHAY  | 
SOT-23  | 
50000  | 
|||||
Nexperia  | 
25+  | 
N/A  | 
14675  | 
原装现货17377264928微信同号  | 
|||
ST  | 
2511  | 
SOT-523  | 
16900  | 
电子元器件采购降本30%!原厂直采,砍掉中间差价  | 
|||
恩XP  | 
23+  | 
6000  | 
原装正品现货,德为本,正为先,通天下!  | 
||||
INFINEON  | 
24+  | 
N/A  | 
8000  | 
全新原装正品,现货销售  | 
|||
NEXPERIA/安世  | 
23+  | 
NA  | 
9990  | 
只有原装  | 
BAS4芯片相关品牌
BAS4规格书下载地址
BAS4参数引脚图相关
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BAS4数据表相关新闻
BAS40-05WH6327
进口代理
2023-8-24BAS316G-SOD323R-TG_UTC代理商
BAS316G-SOD323R-TG_UTC代理商
2023-2-13BAS16XV2T1G中文产品资料功能描述
BAS16XV2T1G中文产品资料
2022-6-6BAS40-07E6327
BAS40-07E6327
2021-3-23BAS3010B-03WE6327全新原装现货
可立即发货
2019-9-20BAS40-05WH6327
肖特基二极管与整流器 AF SCHOTTKY DIODE
2019-8-9
DdatasheetPDF页码索引
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