BAS40-价格

参考价格:¥0.2740

型号:BAS40-00-E3-08 品牌:Vishay 备注:这里有BAS40-多少钱,2025年最近7天走势,今日出价,今日竞价,BAS40-批发/采购报价,BAS40-行情走势销售排行榜,BAS40-报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAS40-

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diodes, Single & Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diodes, Single & Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diodes, Single & Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

General-purpose diode for high-speed switching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

Schottky Diode in SOD-523

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingSOD-523package •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diode

FEATURES •Thisdiodefeaturesverylowturn-onvoltageand fastswitching •ThisdeviceisprotectedbyaPNjunctionguard ringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •SpacesavingSOD-523package •BaseP/N-G3-RoHS-compliant,commer

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diode

FEATURES •Thisdiodefeaturesverylowturn-onvoltageand fastswitching •ThisdeviceisprotectedbyaPNjunctionguard ringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •SpacesavingSOD-523package •BaseP/N-G3-RoHS-compliant,commer

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Schottky Diode in SOD-523

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingSOD-523package •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Schottky Diode in SOD-523

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingSOD-523package •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Small Signal Schottky Diode

FEATURES •Thisdiodefeaturesverylowturn-onvoltageandfastswitching •ThisdeviceisprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •SpacesavingSOD-523package •Materialcategorization:fordefinitionsofcompliancepleaseseewww.v

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SCHOTTKY BARRIER DIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Schottky barrier double diodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Surface Mount Schottky Barrier Diodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

美台半导体

DIODES

Schottky Diodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

GE

GE Industrial Company

GE

Surface mount Schottky-Barrier Single-/ Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

DiotecDiotec Semiconductor

德欧泰克

Diotec

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

Surface Mount Schottky Diode

Voltage:40VoltsPower:200mW Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

SCHOTTKY DIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

Surface mount schottky barrier diode

Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

General-purpose Schottky diodes

ETC

知名厂家

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD).

DCCOM

Dc Components

DCCOM

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •Lowforwardvoltage •Fastswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

200mW, Low VF, SMD Schottky Barrier Diode

FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

Surface Mount Schottky Barrier Diodes

Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimite

WEITRON

Weitron Technology

WEITRON

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

美台半导体

DIODES

SCHOTTKY DIODE

FEATURES ●LowForwardVoltage ●FastSwitching

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

Surface Mount Schottky Barrier Diode 200 mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

Surface mount schottky barrier diode

FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

DSK

Diode Semiconductor Korea

DSK

General-purpose diode for high-speed switching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

Schottky Diodes

■Features ●LowForwardVoltage ●FastSwitching

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Surface Mount Schottky Barrier Diode

Features ◇Lowturn-onvoltage ◇Fastswitching ◇PNjunctionguardRingfortransient

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SURFACE MOUNT SCHOTTKY BARRIER DIODES

SMALLSIGNALSCHOTTKYDIODES0mAMPERES2040VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

PACELEADER

Plastic-Encapsulate Diodes

Plastic-EncapsulateDiodes FEATURES •LowForwardVoltage •FastSwitching

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH

Low Forward Voltage Drop, Fast Switching

FEATURES ●LowForwardVoltageDrop. ●FastSwitching. ●PNJunctionGuardRingforTransientand ESDProtection.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

200mA Surface Mount Small Signal Diodes

■Features •Lowcurrentrectificationandhighspeedswitching. •Smallsurfacemounttype. •Upto200mAcurrentcapability. •Lowforwardvoltagedrop(VF=1.00Vtyp.@40mA). •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-freepart,ex.BAS40G. •Le

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

CITC

General-purpose Schottky diodes

ETC

知名厂家

SCHOTTKY BARRIER DIODE

SOT-23Plastic-EncapsulateDiodes FEATURES ●LowForwardVoltage ●FastSwitching

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SCHOTTKY BARRIER DIODE

FEATURES LowForwardVoltage FastSwitching

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

SCHOTTKY BARRIER DIODE

Features Highcurrentcapability

DAESAN

Daesan Electronics Corp.

DAESAN

General-purpose dual Schottky diode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •AEC-Q101qualified 3.Applications •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

美台半导体

DIODES

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

美台半导体

DIODES

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

美台半导体

DIODES

General-purpose diode for high-speed switching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

Small Signal Schottky Diodes

Features -EpoxymeetsUL-94V-0flammabilityrating. -Lowforwardvoltage. -Surfacemountdevice.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

Schottky Barrier Diode

Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

ROHM

Schottky Barrier Diode

Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

ROHM

SCHOTTKY BARRIER DIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Dual Series Schottky Barrier Diode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. •Ex

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC

SCHOTTKY BARRIER DIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Dual Series Schottky Barrier Diode

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Dual Series Schottky Barrier Diode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BAS40-产品属性

  • 类型

    描述

  • 型号

    BAS40-

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    Silicon Schottky Diodes(General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

更新时间:2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
标准封装
22048
全新原装正品/价格优惠/质量保障
Vishay(威世)
24+
标准封装
7213
原厂直销,大量现货库存,交期快。价格优,支持账期
INFINEON
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
Vishay
23+
N/A
3000
只做原装,可直接咨询
DIODES/美台
25+
SOT-23
37724
DIODES/美台全新特价BAS40-05-7-F即刻询购立享优惠#长期有货
ON
24+
SOT-23
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon/英飞凌
23+
SOT143-4
12700
买原装认准中赛美
DIODES
24+
原装原封
25000
##公司100%原装现货,假一罚十!可含税13%免费提供样品支持
ON
23+
NA
6800
原装正品,力挺实单
三年内
1983
只做原装正品

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