High Speed Switching Diode

High Speed Switching Diode Applications • High-speed switching

200mW, High-speed switching SMD Diode

FEATURES - Fast switching device (trr

0.25A , 100V Surface Mount Small Signal Switching Diode

FEATURES • High switching speed: max. 4 ns • Ultra small plastic SMD package. • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 100 V APPLICATINS • High-speed switching in e.g. surface mounted circuits.

SMD Small Signal Diodes

Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, High-speed switching, Rectifying Commercial grade 1) Mechanical Data 1) Taped and reeled 3000

丝印代码：A6；Silicon Epitaxial Planar Switching Diode

Applications • High-speed switching

200mW High-Speed Switching SMD Diode

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Small Signal Diodes

SMD Small Signal Diodes SMD Kleinsignal-Dioden

Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1)

丝印代码：A6；Silicon Epitaxial Planar Switching Diode

Application s • High-speed switching • -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

丝印代码：A6；Silicon Epitaxial Planar Switching Diode

Applications • High-speed switching

200mW, High-speed switching SMD Diode

FEATURES - Fast switching device (trr

200mW, High-speed switching SMD Diode

FEATURES - Fast switching device (trr

封装/外壳：SC-90，SOD-323F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 250MA SOD323F 分立半导体产品 二极管 - 整流器 - 单

200mW High-Speed Switching SMD Diode

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三极管

Small Signal Diodes

200mW High-Speed Switching SMD Diode

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丝印代码：A6；250mW SOD-323 Fast Switching Diode

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High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

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