SURFACE MOUNT SWITCHING DIODES

Features  Fast switching speed.  Very low leakage current  Low capacitance  Surface mount package Ideally Suited for Automatic insertion  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard  AEC-Q101 qualified

小信号开关二极管

丝印代码：A16；SURFACE MOUNT SWITCHING DIODES

Features  Fast switching speed.  Very low leakage current  Low capacitance  Surface mount package Ideally Suited for Automatic insertion  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard  AEC-Q101 qualified

封装/外壳：SC-90，SOD-323F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SOD-323, SWITCHING 分立半导体产品 二极管 - 整流器 - 单

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

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