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BAS28价格

参考价格:¥0.2210

型号:BAS28 品牌:INFINEON 备注:这里有BAS28多少钱,2026年最近7天走势,今日出价,今日竞价,BAS28批发/采购报价,BAS28行情走势销售排行榜,BAS28报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BAS28

丝印代码:JTS;Silicon Switching Diode

Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

INFINEON

英飞凌

BAS28

DUAL, ISOLATED HIGH SPEED SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MAR

CENTRAL

BAS28

DUAL SURFACE MOUNT FAST SWITCHING DIODE

Features  Fast Switching Speed  For General Purpose Switching Applications  Two Electrically Isolated Elements in a Single Compact Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

BAS28

High-speed double diode

ETC

知名厂家

BAS28

High-speed double diode

FEATURES • Continuous reverse voltage:max.75V • High switching speed:4ns. • Repetitive peak forward current:max.500mA APPLICATIONS • High speed switching application.

BILIN

银河微电

BAS28

Surface mount switching diode

FEATURES • Continuous reverse voltage:max.75V • High switching speed:4ns. • Repetitive peak forward current:max.500mA APPLICATIONS • High speed switching application.

LUGUANG

鲁光电子

BAS28

Surface mount switching diode

FEATURES • Continuous reverse voltage:max.75V • High switching speed:4ns. • Repetitive peak forward current:max.500mA APPLICATIONS • High speed switching application.

DSK

BAS28

丝印代码:JT;High-speed double diode

Features and benefits * High switching speed: trr ≤ 4 ns * Reverse voltage: VR ≤ 75 V * Repetitive peak reverse voltage: VRRM ≤ 85 V * Repetitive peak forward current: IFRM ≤ 500 mA * AEC-Q101 qualified * Small SMD package

NEXPERIA

安世

BAS28

High-Speed Double Diode

Features • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 85 V • Repetitive peak forward current:max. 500 mA .

KEXIN

科信电子

BAS28

Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)

Silicon Switching Diode Array ●For high-speed switching ●Electrically insulated diodes

SIEMENS

西门子

BAS28

High-speed double diode

The BAS28 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. • Small plastic SMD package\n• High switching speed: max. 4 ns\n• Continuous reverse voltage: max. 75 V\n• Repetitive peak reverse voltage: max. 85 V\n• Repetitive peak forward current: max. 500 mA .\n• AEC-Q101 qualified;

NEXPERIA

安世

BAS28

DUAL SURFACE MOUNT FAST SWITCHING DIODE

Dual surface mount fast switching diode. Fast Switching Speed\nFor General Purpose Switching Applications\nTwo Electrically Isolated Elements in a Single Compact Package;

DIODES

美台半导体

BAS28

General Purpose High Speed Switching Diode

INFINEON

英飞凌

BAS28

High-speed double diode

ETC

知名厂家

BAS28

丝印代码:JT;High-speed double diode

文件:135.17 Kbytes Page:4 Pages

BILIN

银河微电

BAS28

High-Speed Double Diode

文件:376.76 Kbytes Page:3 Pages

MCC

BAS28

High-speed double diode

文件:35.95 Kbytes Page:7 Pages

PHILIPS

飞利浦

BAS28

丝印代码:JTS;Silicon Switching Diode

文件:93.35 Kbytes Page:7 Pages

INFINEON

英飞凌

BAS28

丝印代码:JTS;For high-speed switching applications

文件:93.35 Kbytes Page:7 Pages

INFINEON

英飞凌

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose and sw

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose and sw

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose and sw

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose and sw

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

VISHAYVishay Siliconix

威世威世科技公司

丝印代码:KT7;DUAL SURFACE MOUNT FAST SWITCHING DIODE

Features  Fast Switching Speed  For General Purpose Switching Applications  Two Electrically Isolated Elements in a Single Compact Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

DUAL SURFACE MOUNT FAST SWITCHING DIODE

Features  Fast Switching Speed  For General Purpose Switching Applications  Two Electrically Isolated Elements in a Single Compact Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

丝印代码:KT7;DUAL SURFACE MOUNT FAST SWITCHING DIODE

Features  Fast Switching Speed  For General Purpose Switching Applications  Two Electrically Isolated Elements in a Single Compact Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

丝印代码:JTS;Silicon Switching Diode

Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

INFINEON

英飞凌

Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes)

Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes

SIEMENS

西门子

丝印代码:JT;Silicon Epitaxial Planar Switching Diode

Features and benefits * High swi tching sp eed: trr 4 ns * Reverse voltage: VR 75 V * Repetitive peak reverse voltage: VRRM 85 V * Repetitive peak forward current: IFRM 500 mA * mall SMD package * -CAR for automotive and other applications requiring unique site and control change requiremen

GWSEMI

唯圣电子

封装/外壳:TO-253-4,TO-253AA 包装:管件 描述:DIODE SW 75V 250MA SOT143 分立半导体产品 二极管 - 整流器 - 阵列

CENTRAL

封装/外壳:TO-253-4,TO-253AA 包装:管件 描述:DIODE SW 75V 250MA SOT143 分立半导体产品 二极管 - 整流器 - 阵列

CENTRAL

High-speed double diode

ETC

知名厂家

Silicon Switching Diode

文件:93.35 Kbytes Page:7 Pages

INFINEON

英飞凌

SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES

文件:430.07 Kbytes Page:2 Pages

CENTRAL

ISOLATED HIGH SPEED SILICON SWITCHING DIODES

文件:430.07 Kbytes Page:2 Pages

CENTRAL

High-speed double diode

文件:279.3 Kbytes Page:12 Pages

PHILIPS

飞利浦

High-speed double diode

文件:135.17 Kbytes Page:4 Pages

BILIN

银河微电

Small Signal Schottky Diodes

文件:166.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:175.56 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:211.18 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:166.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:211.18 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:175.56 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:92.15 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:92.15 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:166.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:166.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:92.15 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:175.56 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:211.18 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件:166.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

BAS28产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Automotive

  • Configuration:

    Dual

  • Polarity:

    Anode

  • Power Rating (mW):

    250 mW

  • N):

    No Y/N

  • Peak RepetitiveReverse VoltageVRRM (V):

    85 V

  • Reverse Recovery Time trr (ns):

    4 ns

  • Maximum Average Rectifier Current IO (mA):

    215 mA

  • Maximum Peak Forward Surge Current IFSM (A):

    4 A

  • Forward Voltage Drop VF @ IF (mA):

    0.715

  • Maximum ReverseCurrent IR (µA):

    1 µA

  • Maximum Reverse Current IR @ VR (V):

    85 V

  • V(BR)R (V) Min (µA):

    85

  • TotalCapacitance CT (pF):

    1.5 pF

  • VF(V) Max @ IF=100mA:

    1

  • Packages:

    SOT143

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
标准封装
7956
全新原装正品/价格优惠/质量保障
INFINEON/英飞凌
25+
SOT343
13818
INFINEON/英飞凌原装特价BAS28WH6327XTSA1即刻询购立享优惠#长期有货
CENTRAL
24+
SOT143
98000
一级代理/全新原装现货/长期供应!
恩XP
25+
SOT-143
897000
原厂直接发货进口原装
Nexperia(安世)
24+
N/A
12980
原装正品现货支持实单
Nexperia(安世)
25+
N/A
1
二极管 - 通用,功率,开关 BAS28/SOT143/SOT4
恩XP
26+
SOT-143
76200
全新原装现货库存,本公司承诺原装正品假一赔百
Nexperia/安世
2550+
SOT-143
8575
只做原装正品现货或订货假一赔十!
恩XP
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
VISHAY/威世
2025+
SOT143
5000
原装进口价格优 请找坤融电子!

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