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位置：首页 > IC中文资料第6044页 > BAS16V

BAS16V价格

参考价格：￥0.3288

型号：BAS16V-7 品牌：Diodes 备注：这里有BAS16V多少钱，2024年最近7天走势，今日出价，今日竞价，BAS16V批发/采购报价，BAS16V行情走势销售排行榜，BAS16V报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAS16V

150mW Switching Diodes

Features •FastSwitchingSpeed •HighConductance •LeadFreePlating •ForGeneralPurposeSwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuf

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAS16V

SWITCHING DIODE

FEATURES •FastSwitchingSpeed •ForGeneralPurposeSwitchingApplications •HighConductance

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
BAS16V

0.3A , 100V Plastic-Encapsulated Transistors

FEATURES •Fastswitchingspeed •ForGeneralPurposeSwitchingApplications •HighConductance

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BAS16V

DUAL SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16V

SOT-563 Plastic-Encapsulate Diodes

SWITCHINGDIODE FEATURES •FastSwitchingSpeed •ForGeneralPurposeSwitchingApplications •HighConductance •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH •MoistureSensitivityLevel1

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
BAS16V

Plastic-Encapsulate Diodes

FEATURES FastSwitchingSpeed ForGeneralPurposeSwitchingApplications HighConductance

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BAS16V

SOT-23 Plastic-Encapsulate Switching Diode

文件：247.36 Kbytes Page：4 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON
BAS16V

DUAL SURFACE MOUNT SWITCHING DIODE

文件：213.66 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16V

SWITCHING DIODE

文件：1.1034 Mbytes Page：4 Pages

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BAS16V-7

DUAL SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VA

SURFACE MOUNT SWITCHING DIODE ARRAY

Features •FastSwitchingSpeed •LowForwardVoltage:Maximumof0.715Vat1mA •FastReverseRecovery:Maximumof4ns •LowCapacitance:Maximumof1.5pF •LowLeakageCurrent •Ultra-SmallSurfaceMountPackage •ThermallyEfficientCopperAlloyLeadframeforHighPowerDissipation •To

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VA-7

SURFACE MOUNT SWITCHING DIODE ARRAY

Features •FastSwitchingSpeed •LowForwardVoltage:Maximumof0.715Vat1mA •FastReverseRecovery:Maximumof4ns •LowCapacitance:Maximumof1.5pF •LowLeakageCurrent •Ultra-SmallSurfaceMountPackage •ThermallyEfficientCopperAlloyLeadframeforHighPowerDissipation •To

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VAQ

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent TripleIsolatedFastSwitchingDiodeArray Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAl

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VAQ-7

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent TripleIsolatedFastSwitchingDiodeArray Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAl

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VPT

SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere

FEATURE *Smallsurfacemountingtype.(SOT-563) *Highspeed.(TRR=1.5nSecTyp.) *Suitableforhighpackingdensity. *Maximumtotalpowerdisspationis150mW. *Peakforwardcurrentis150mA. APPLICATION *Ultrahighspeedswitching

CHENMKOCHENMKO

CHENMKO

CHENMKO
BAS16VTWPT

FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere

FEATURE *Smallsurfacemountingtype.(SOT-563) *Highspeed.(TRR=1.5nSecTyp.) *Suitableforhighpackingdensity. *Maximumtotalpowerdisspationis200mW. *Peakforwardcurrentis300mA. *Leadfreedevices APPLICATION *Ultrahighspeedswitching *Forgeneralpurposeswitching

CHENMKOCHENMKO

CHENMKO

CHENMKO
BAS16VV

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VV

Triple high-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VV

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VV

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAlloyLeadframeforHighPower Dissipation T

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VV

High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaultrasmallandflatleadSOT666Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetiti

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS16VV

High-speed switching diodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS16VV-7

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAlloyLeadframeforHighPower Dissipation T

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VVQ

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent TripleIsolatedFastSwitchingDiodeArray Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAl

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VVQ-7

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent TripleIsolatedFastSwitchingDiodeArray Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAl

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VY

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VY

Triple high-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VY

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VY

High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeak

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS16VY

High-speed switching diodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS16VY-Q

High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeak

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS16V_07

DUAL SURFACE MOUNT SWITCHING DIODE

文件：213.66 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16V_13

150mW Switching Diodes

文件：325.54 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAS16V_15

Plastic-Encapsulated Transistors

文件：320.98 Kbytes Page：2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BAS16V_15

DUAL SURFACE MOUNT SWITCHING DIODE

文件：148.1 Kbytes Page：5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16V-7

DUAL SURFACE MOUNT SWITCHING DIODE

文件：213.66 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VA-7

封装/外壳：SOT-563，SOT-666 包装：散装 描述：FAST SWITCHING DIODE SOT563 T\u0026R 分立半导体产品 二极管 - 整流器 - 阵列

PAMDiodes Incorporated

龙鼎威

PAM
BAS16VTB6

SURFACE MOUNT SWITCHING DIODES

文件：172.33 Kbytes Page：3 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAS16VTB6_16

SURFACE MOUNT SWITCHING DIODES

文件：181.65 Kbytes Page：5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAS16VTB6_R1_00001

SURFACE MOUNT SWITCHING DIODES

文件：181.65 Kbytes Page：5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAS16VTB6_R1_00001

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SURFACE MOUNT SWITCHING DIODE 分立半导体产品 二极管 - 整流器 - 阵列

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAS16VTB6_R2_00001

SURFACE MOUNT SWITCHING DIODES

文件：181.65 Kbytes Page：5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAS16VV

High-speed switching diodes

文件：150.73 Kbytes Page：20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VV

High-speed switching diodes

文件：150.73 Kbytes Page：20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VV

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages

文件：150.73 Kbytes Page：20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VV

Triple high-speed switching diodes

文件：67.84 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAS16VV_15

SURFACE MOUNT SWITCHING DIODE ARRAY

文件：99.62 Kbytes Page：4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BAS16VY

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages

文件：150.73 Kbytes Page：20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VY

High-speed switching diodes

文件：150.73 Kbytes Page：20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VY

High-speed switching diodes

文件：150.73 Kbytes Page：20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS16VY

Triple high-speed switching diodes

文件：67.84 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BAS16V产品属性

  • 类型

    描述

  • 型号

    BAS16V

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    DUAL SURFACE MOUNT SWITCHING DIODE

BAS16V供应商更多...

更新时间：2024-5-15 19:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市创盛芯科技有限公司
BAS16VY
NXP/恩智浦
21+
SOT343
10000
全新原装现货
询价
深圳市正迈科技有限公司
BAS16V-7
DIODES/美台
23+
SOT-563
10500
原装元器件供应现货支持。咨询更多现货库存,支持样
询价
深圳市芯福林电子科技有限公司
BAS16V7
Diodes
21+
SOT563
13880
公司只售原装,支持实单
询价
千层芯半导体(深圳)有限公司
BAS16V-7
DIODES
17+
原厂原封
6000
原装进口香港现货价优
询价
深圳市星宇佳科技有限公司
BAS16V
CJ/长电
2020+
SOT-563
3000
原装现货支持BOM配单服务
询价
深圳市星佑电子有限公司
BAS16V-7
DIODES/美台
21+
SOT563
10000
原装,品质保证,请来电咨询
询价
深圳市科恒伟业电子有限公司
BAS16VY
NXP/恩智浦
22+
SOT363-6
6452
只做原装正品现货!或订货假一赔十!
询价
绿盛电子(香港)有限公司
BAS16V-7
DIODES
2015+
SOT563
26898
一级代理原装现货
询价
深圳市维尔达电子有限公司
BAS16V-7
DIODES
2023+
SOT-563F
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市航润创能电子集团有限公司
BAS16VY
NEXPERIA/安世
21+
SOT-363
37360
NXP现货商/只做原装
询价

BAS16V芯片相关品牌

  • BANNER
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  • LINER
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  • SANYO
  • SEOUL

BAS16V规格书下载地址

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BAS16V数据表相关新闻

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