High-voltage switching diodes

General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features ■ High switching speed: trr ≤ 50 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 300 V ■ Repetitive peak reverse voltage:

丝印代码：HQ；High-voltage switching diodes

1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications Table 1. Product overview Type number Package Configuration Nexperia JEITA BAS101 SOT23 - single BAS101S SOT23 - dual series H

High-voltage switching diodes

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. • High switching speed: trr ≤ 50 ns\n• Low leakage current\n• Repetitive peak reverse voltage: VRRM ≤ 300\n• Low capacitance: Cd ≤ 2 pF\n• Reverse voltage: VR ≤ 300 V\n• Small SMD plastic package\n• AEC-Q101 qualified;

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High-voltage switching diodes

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. • High switching speed: trr ≤ 50 ns\n• Low leakage current\n• Repetitive peak reverse voltage: VRRM ≤ 300\n• Low capacitance: Cd ≤ 2 pF\n• Reverse voltage: VR ≤ 300 V\n• Small SMD plastic package\n• AEC-Q101 qualified;

丝印代码：HR；High-voltage switching diodes

1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications Table 1. Product overview Type number Package Configuration Nexperia JEITA BAS101 SOT23 - single BAS101S SOT23 - dual series H

High-voltage switching diodes

General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features ■ High switching speed: trr ≤ 50 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 300 V ■ Repetitive peak reverse voltage:

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GP 300V 200MA TO236AB 分立半导体产品 二极管 - 整流器 - 单

High-voltage switching diodes

High-voltage switching diodes

文件：126.56 Kbytes Page：11 Pages

High-voltage switching diodes

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 300V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages