High-voltage switching diodes

General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features ■ High switching speed: trr ≤ 50 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 300 V ■ Repetitive peak reverse voltage:

High-voltage switching diodes

1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications Table 1. Product overview Type number Package Configuration Nexperia JEITA BAS101 SOT23 - single BAS101S SOT23 - dual series H

High-voltage switching diodes

High-voltage switching diodes

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 300V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

High-voltage switching dual diode

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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Smooth, high torque, roller ratchet handle

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