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BAR63价格
参考价格：￥0.3250
型号：BAR63-02L 品牌：INFINEON 备注：这里有BAR63多少钱，2025年最近7天走势，今日出价，今日竞价，BAR63批发/采购报价，BAR63行情走势销售排行榜，BAR63报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BAR63 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | SIEMENS 西门子 |   | |
BAR63 | Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | |
BAR63 | Silicon PIN Diode Features ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | KEXIN 科信电子 | | |
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode Features ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | KEXIN 科信电子 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode Features ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | KEXIN 科信电子 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode Features ● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz | KEXIN 科信电子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes ● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz | Infineon 英飞凌 | | ||
RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode Features ● Low forward resistance ● Space saving SOD-523 package with low series inductance ● Very small reverse capacitance | KEXIN 科信电子 | | ||
RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Common Anode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Common Anode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
RF PIN Diodes - Dual, Common Anode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz | SIEMENS 西门子 | | ||
Silicon PIN Diodes 文件：180.16 Kbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：180.16 Kbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：1.05277 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：1.05277 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
PIN 二极管 Silicon PIN 二极管 | Infineon 英飞凌 | | ||
封装/外壳：SOD-882 包装：卷带（TR） 描述：RF DIODE PIN 50V 250MW TSLP-2 分立半导体产品 二极管 - 射频 | Infineon 英飞凌 | | ||
射频PIN型二极管 | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：180.16 Kbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：1.05277 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：1.05277 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE PIN 50V 250MW SC79-2 分立半导体产品 二极管 - 射频 | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：180.16 Kbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：1.05277 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
Silicon PIN Diodes 文件：1.05277 Mbytes Page：16 Pages | Infineon 英飞凌 | |
BAR63产品属性
- 类型
描述
- 型号
BAR63
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Infineon |
25+ |
SOT23 |
6000 |
原装正品,假一罚十! |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
INFINEON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
INFINEON |
21+ |
SOT323 |
999999 |
全新原装鄙视假货 |
|||
INFI |
25+23+ |
Sod-323 |
32455 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
2025+ |
2500 |
原装进口价格优 请找坤融电子! |
BAR63规格书下载地址
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2013-1-31
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