Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz

Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

RF PIN 二极管

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and suppor • Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz\n• Very low forward resistance RF = 1.9 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz\n• Charge carrier lifetime τ = 75 ns (typical)\n• Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 ;

Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz

丝印代码：G；Silicon PIN Diodes

● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz

丝印代码：G；Silicon PIN Diodes

文件：180.16 Kbytes Page：16 Pages

丝印代码：G；Silicon PIN Diodes

文件：1.05277 Mbytes Page：16 Pages

丝印代码：G；Silicon PIN Diodes

文件：1.05277 Mbytes Page：16 Pages

Silicon PIN diode

DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. FEATURES • High speed switching for RF signals • Low diode capacitance • Low diode forward resistance • Very low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches.

Silicon PIN diode

DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. FEATURES • High speed switching for RF signals • Low diode capacitance • Low diode forward resistance • Very low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches.