RF PIN Diodes - Single in MiniMELF (SOD-80)

FEATURES • Wide frequency range 10 MHz to 1 GHz • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Current controlled HF resistance in adjustable attenuators MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathod

RF PIN Diodes - Single in MiniMELF (SOD-80)

Wide frequency range 10 MHz to 1 GHz\nMaterial categorization:for definitions of compliance please see www.vishay.com/doc?99912;

RF PIN Diodes - Single in MiniMELF SOD-80

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RF PIN Diodes - Single in MiniMELF SOD-80

分立 ·Wide frequency range 10 MHz to 1 GHz\n·AEC-Q101 qualified\n·Material categorization:for definitions of compliance please see www.vishay.com/doc?99912;

RF PIN Diodes - Single in MiniMELF (SOD-80)

FEATURES • Wide frequency range 10 MHz to 1 GHz • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Current controlled HF resistance in adjustable attenuators MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathod

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR） 描述：RF DIODE PIN 30V SOD80 MINIMELF 分立半导体产品 二极管 - 射频

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR） 描述：RF DIODE SOD80 MINIMELF 分立半导体产品 二极管 - 射频

Silicon PIN Diodes

FEATURES • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Material categorization:   For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Current controlled HF resistance in adjustable attenuators

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3025 A Surge current 30 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar