位置:首页 > IC中文资料 > BD679

BD679晶体管资料

  • BD679(A)别名:BD679(A)三极管、BD679(A)晶体管、BD679(A)晶体三极管

  • BD679(A)生产厂家:德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯

  • BD679(A)制作材料:Si-N+Darl+Di

  • BD679(A)性质:低频或音频放大 (LF)_功率放大 (L)

  • BD679(A)封装形式:直插封装

  • BD679(A)极限工作电压:80V

  • BD679(A)最大电流允许值:4A

  • BD679(A)最大工作频率:>10MHZ

  • BD679(A)引脚数:3

  • BD679(A)最大耗散功率:40W

  • BD679(A)放大倍数:β>750

  • BD679(A)图片代号:B-21

  • BD679(A)vtest:80

  • BD679(A)htest:10000100

  • BD679(A)atest:4

  • BD679(A)wtest:40

  • BD679(A)代换 BD679(A)用什么型号代替:BD263A,BD779,FD50B,2N6039,

BD679价格

参考价格:¥0.6656

型号:BD679 品牌:MULTICOMP 备注:这里有BD679多少钱,2026年最近7天走势,今日出价,今日竞价,BD679批发/采购报价,BD679行情走势销售排行榜,BD679报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD679

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

ONSEMI

安森美半导体

BD679

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

CDIL

BD679

NPN SILICON POWER DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER

CENTRAL

BD679

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

MOTOROLA

摩托罗拉

BD679

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

COMSET

BD679

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

COMSET

BD679

Silicon NPN Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676/678/680 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

ISC

无锡固电

BD679

Plastic Medium-Power Silicon NPN Darlingtons

This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD679

Silicon NPN Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676/678/680 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

SAVANTIC

BD679

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

SIEMENS

西门子

BD679

PNP SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

SIEMENS

西门子

BD679

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD679

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD679

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD679

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD679

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

TEL

BD679

中等功率 NPN 达林顿双极功率晶体管

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications. • High DC Current GainhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682\n• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

BD679

互补硅功率达林顿晶体管

The devices are manufactured in planar base island technology with monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency;

STMICROELECTRONICS

意法半导体

BD679

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BD679

Transistor

COMSET

BD679

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN DARL 80V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BD679

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件:252.33 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

BD679

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BD679

NPN SILICON POWER DARLINGTON TRANSISTOR

文件:332.11 Kbytes Page:2 Pages

CENTRAL

BD679

Plastic Medium?좵ower Silicon NPN Darlingtons

文件:109.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

ONSEMI

安森美半导体

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively

FAIRCHILD

仙童半导体

NPN SILICON POWER DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER

CENTRAL

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

CDIL

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

MOTOROLA

摩托罗拉

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

COMSET

Plastic Medium-Power Silicon NPN Darlingtons

This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

SAVANTIC

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

TEL

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

ONSEMI

安森美半导体

Silicon monolithic integrated circuits

文件:157.05 Kbytes Page:5 Pages

ROHM

罗姆

Three-phase Brushless Motor Driver for Polygonal Mirrors

文件:280.9 Kbytes Page:15 Pages

ROHM

罗姆

Three-phase Brushless Motor Driver for Polygonal Mirrors

文件:280.9 Kbytes Page:15 Pages

ROHM

罗姆

3-PHASE Brushless motor driver for porigon mirror motor

文件:293.82 Kbytes Page:6 Pages

ROHM

罗姆

1chip motor driver for printer

文件:325.29 Kbytes Page:6 Pages

ROHM

罗姆

NPN SILICON POWER DARLINGTON TRANSISTOR

文件:332.11 Kbytes Page:2 Pages

CENTRAL

NPN Epitaxial Planar Transistor

文件:239.21 Kbytes Page:6 Pages

CYSTEKEC

全宇昕科技

Medium Power Linear and Switching Applications

文件:230.32 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

Medium Power Linear and Switching Applications

文件:44.93 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

文件:230.32 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

Plastic Medium?좵ower Silicon NPN Darlingtons

文件:109.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:230.99 Kbytes Page:3 Pages

FS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件:252.33 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

Plastic Medium-Power Silicon NPN Darlingtons

文件:87.33 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Plastic Medium-Power Silicon NPN Darlingtons

文件:87.33 Kbytes Page:4 Pages

ONSEMI

安森美半导体

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3025 A Surge current 30 kA

POSEICO

Silicon PIN Diodes

FEATURES • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Material categorization:   For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Current controlled HF resistance in adjustable attenuators

VISHAYVishay Siliconix

威世威世科技公司

BD679产品属性

  • 类型

    描述

  • Marketing Status:

    Active

  • Grade:

    Industrial

  • Transistor Polarity:

    NPN

  • Collector-Emitter Voltage_max(V):

    80

  • Collector-Base Voltage_max(V):

    80

  • Collector Current_abs_max(A):

    4

  • Dc Current Gain_min:

    750

  • Test Condition for hFE (IC):

    1.5

  • Test Condition for hFE (VCE)_spec(V):

    3

  • VCE(sat)_max(V):

    2.5

  • Test Condition for VCE(sat) - IC:

    1.5

  • Test Condition for VCE(sat) - IB_spec(mA):

    30

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
ROHM
2016+
HSOP28
3500
只做原装,假一罚十,公司可开17%增值税发票!
ON
24+
TO-126
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST/意法半导体
25+
SOT-32
20000
公司只有正品,实单可谈
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货BD679即刻询购立享优惠#长期有排单订
ST
24+/25+
554
原装正品现货库存价优
ON/安森美
25+
SMD
20000
原装
ST
23+
TO-126
1200
绝对全新原装!优势供货渠道!特价!请放心订购!
ROHM
21+
LQFP
50
只做原装鄙视假货15118075546
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品

BD679数据表相关新闻