Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

NPN SILICON POWER DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Plastic Medium-Power Silicon NPN Darlingtons

This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

互补硅功率达林顿晶体管

The devices are manufactured in planar base island technology with monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency;

Medium Power Linear and Switching Applications

文件：44.93 Kbytes Page：4 Pages

TRANSISTOR:Darilington

Bipolar Transistor

NPN Epitaxial Silicon Transistor

文件：230.32 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：230.99 Kbytes Page：3 Pages

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：252.33 Kbytes Page：6 Pages

Medium Power Linear and Switching Applications

文件：230.32 Kbytes Page：4 Pages

NPN SILICON POWER DARLINGTON TRANSISTOR

文件：332.11 Kbytes Page：2 Pages

NPN Epitaxial Planar Transistor

文件：239.21 Kbytes Page：6 Pages

Plastic Medium?좵ower Silicon NPN Darlingtons

文件：109.23 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 80V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

Plastic Medium-Power Silicon NPN Darlingtons

文件：87.33 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3025 A Surge current 30 kA

Silicon PIN Diodes

FEATURES • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Material categorization:   For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Current controlled HF resistance in adjustable attenuators