Mute detector IC

The BA336, BA338 and BA338L are monolithic ICs designed for mute detection and tape end detection. When a duration of silence (52dBm or less) exceeds the time constant set with an external CR circuit, a song gap is identified, and after this a plunger control signal is output during a pulse whose

Mute detector IC

The BA336, BA338 and BA338L are monolithic ICs designed for mute detection and tape end detection. When a duration of silence (52dBm or less) exceeds the time constant set with an external CR circuit, a song gap is identified, and after this a plunger control signal is output during a pulse whose wi 1) Mute detection time and output pulse width can be set within a broad range by an external CR circuit.\n2) Includes circuit for preventing errors due to song gap noise.\n3) Includes over-current protection circuit.\n4) Includes circuit for preventing errors when the power is turned on.\n5) Detecti;

Mute detector IC

The BA336, BA338 and BA338L are monolithic ICs designed for mute detection and tape end detection. When a duration of silence (52dBm or less) exceeds the time constant set with an external CR circuit, a song gap is identified, and after this a plunger control signal is output during a pulse whose

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45 ● Intermodulation Distortion @ 20

5-Amp Adjustable Regulators

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5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages