2A 600V N-channel Enhancement Mode Power MOSFET

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2A 600V N-channel Enhancement Mode Power MOSFET

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2A 600V N-channel Enhancement Mode Power MOSFET

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2A 600V N-channel Enhancement Mode Power MOSFET

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2A 600V N-channel Enhancement Mode Power MOSFET

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2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.34834 Mbytes Page：13 Pages

≥600V MOSFET

Inclinometer

Features ■Plastic, PC ■Zero point calibration +/‐ 15° ■Two analog outputs ■M12 x 1 male connector Functional principle Inclination is determined by a wear-free semiconducting sensor element.

Inclinometer – With Increased Temperature Range

Features ■Plastic, PC ■Zero point calibration +/‐ 15° ■Two analog outputs ■Cable connection Functional principle Inclination is determined by a wear-free semiconducting sensor element.

Inclinometer

Features ■Plastic, PC ■Zero point calibration +/‐ 15° ■Two analog outputs ■M12 x 1 male connector Functional principle Inclination is determined by a wear-free semiconducting sensor element.

Inclinometer – With Increased Temperature Range

Features ■Plastic, PC ■Zero point calibration +/‐ 15° ■Two analog outputs ■Cable connection Functional principle Inclination is determined by a wear-free semiconducting sensor element.

Inclinometer

Features ■Plastic, PC ■Zero point calibration +/‐ 15° ■Two analog outputs ■M12 x 1 male connector Functional principle Inclination is determined by a wear-free semiconducting sensor element.

Inclinometer – With CANopen Interface

Features ■Rectangular, height 42 mm ■Plastic, PA12-GF30 ■Convenient CANopen interface ■Fulfills CiA DS‐301, CiA DSP‐410 ■High resolution and accuracy ■Baud rates of 10 kbps up to 1 Mbps ■High sampling rate and bandwidth ■Parameterizable vibration suppression ■One TPDO (RTR, cyclic, event-

Inclinometer

Features ■Rectangular, plastic, Ultem ■Status displayed via LED ■Angle detection along two axes with ±60 ° measuring range ■High protection class IP68/IP69K ■Protected against salt spray and rapid temperature change ■15…30 VDC ■M12 × 1 male connector, 5-pin ■Analog output 4…20 mA ■The c

N-Channel MOSFET uses advanced trench technology

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倾角传感器

倾角传感器

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

600V N-Channel Power MOSFET

Features ● RDS(ON)

2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.34834 Mbytes Page：13 Pages