| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SiC Schottky Diode Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over | BASICSEMI 基本半导体 |   | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on V Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power facto | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on V Excellent surge current capability Low capacitive charge | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power suppl | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features ⚫ Ceramic package provides 2.5kV isolation ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive | BASICSEMI 基本半导体 | | ||
SiC Schottky Diode Features Ceramic package provides 2.5kV isolation Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) U | BASICSEMI 基本半导体 | | ||
1200V SiC Schottky Diode | BASICSEMI 基本半导体 | | ||
1200V SiC Schottky Diode | BASICSEMI 基本半导体 | | ||
碳化硅肖特基二极管 | BASICSEMI 基本半导体 | | ||
Mini Size Precision Snap-acting Switches Features/Benefits • Low level and power switching • Long electrical and mechanical life • Increased overtravel • Reliable snap-acting mechanism Typical Applications • Limited space constraints • Communication devices | CK-COMPONENTS 力特 | | ||
1/2 WATT METAL 文件：892.97 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1/2 WATT METAL 文件：929.88 Kbytes Page：1 Pages | NTE | | ||
Subminiature Precision Snap-acting Switches 文件：261.19 Kbytes Page：3 Pages | CK-COMPONENTS 力特 | | ||
Miniature Subminiature Precision Snap-acting Switches 文件：270.9 Kbytes Page：3 Pages | ITT | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BASIC/基本半导体 |
23+ |
TO-252-2 |
14500 |
BASIC/基本半导体全系列在售,可订货 |
|||
BASIC/基本半导体 |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
BASIC/基本半导体 |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
BASIC/基本半导体 |
23+ |
TO-220 |
2890 |
正规渠道,只有原装! |
|||
BASIC/基本半导体 |
23+ |
TO-252-2 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
BASIC/基本半导体 |
23+ |
TO-220 |
20000 |
||||
基本半导体 |
23+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
BASIC |
24+ |
SMD |
1200000 |
绝对原装正品现货假一罚十 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
BASIC/基本半导体 |
24+ |
TO-220 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
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