isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) • Complement to Type 2SD1889 APPLICATIONS • Designed for power amplifier applications.

Power Transistor (120V, -6A)

Medium Power Transistor +/-120V/ +/- 6A

Medium Power Transistor +/-120V/ +/- 6A

Silicon PNP Power Transistors

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包装：袋 描述：B13430 CLEAR SILVER SHIELD-IT ME 静电控制，防静电，ESD，无尘室产品 静电控制屏蔽包，防静电袋、物料

Silicon PNP Power Transistors

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All welded construction

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Wet Tantalum HI TMP® Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal for - 55 °C to 200 °C Operation

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All welded construction

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All welded construction

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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