General description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features

■ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 :

♦ Output power = 120 W

♦ Power gain = 13.5 dB

♦ Efficiency = 48

■ Easy power control

■ Integrated ESD protection

■ High flexibility with respect to pulse formats

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (2.7 GHz to 3.1 GHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

■ S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range