Description

The ACE11204A is the N-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high-density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss and resistance to transients are

needed.

Features

⚫ 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V

20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V

20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V

⚫ Super high-density cell design for extremely low RDS (ON)

⚫ Exceptional on-resistance and maximum DC current capability

Applications

⚫ Drivers: Relays/Solenoids/Lamps/Hammers

⚫ Power Supply Converter Circuits

⚫ Load/Power Switching Cell Phones, Pagers