HIGH AND LOW SIDE DRIVER

文件：315.17 Kbytes Page：15 Pages

HIGH AND LOW SIDE DRIVER

文件：402.39 Kbytes Page：19 Pages

Floating channel designed for bootstrap operation

文件：402.39 Kbytes Page：19 Pages

HIGH AND LOW SIDE DRIVER

文件：315.17 Kbytes Page：15 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

A high voltage, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels.

Floating channel designed for bootstrap operation

文件：402.39 Kbytes Page：19 Pages

HIGH AND LOW SIDE DRIVER

文件：315.17 Kbytes Page：15 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

SOT-23 Plastic-Encapsulate MOSFETS

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-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages