型号 功能描述 生产厂家 企业 LOGO 操作

HEXFET Power MOSFET

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

IRF

HEXFET Power MOSFET

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

IRF

HEXFET Power MOSFET

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

IRF

HEXFET Power MOSFET

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

IRF

AUTOMOTIVE GRADE

文件:450.67 Kbytes Page:10 Pages

Infineon

英飞凌

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

Infineon

英飞凌

AUTOMOTIVE GRADE

文件:450.67 Kbytes Page:10 Pages

Infineon

英飞凌

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Riedon

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

文件:106.68 Kbytes Page:1 Pages

WITTEN

Precision Wirewound Resistors

文件:318.25 Kbytes Page:2 Pages

Riedon

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

AUIRLR120产品属性

  • 类型

    描述

  • 型号

    AUIRLR120

  • 功能描述

    MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-31 22:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
23+
DPAK
12700
买原装认准中赛美
IR
25+
TO-252
4350
原装正品,欢迎来电咨询!
IR
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
Infineon/英飞凌
24+
DPAK
6000
全新原装深圳仓库现货有单必成
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
Infineon(英飞凌)
24+
DPAK
10048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Infineon/英飞凌
21+
DPAK
6820
只做原装,质量保证
Infineon/英飞凌
24+
DPAK
25000
原装正品,假一赔十!
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

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