型号 功能描述 生产厂家 企业 LOGO 操作
AUIRLR024N

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Infineon

英飞凌

AUIRLR024N

Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

AUIRLR024N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

Infineon

英飞凌

Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Infineon

英飞凌

Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

PISTON SEALS

DESCRIPTION The BECA 024 profile is a double acting composite piston seal composed of a profiled rubber ring and a filled PTFE or POM back-up ring. It meets the standards MIL-G-5514F and AS4716. APPLICATIONS Actuators Brakes systems Flight controls Engine systems Landing gear

FRANCEJOINT

Low Power, 5 MBd Digital CMOS Optocoupler

Description ACPL-M21L (single channel SO-5 package), ACPL-021L (single channel SO-8 package) and ACPL-024L (dual channel SO-8 package) are optically-coupled logic gates. The detector IC has CMOS output stage and optical receiver input stage with built-in Schmitt trigger to provide logic-compatibl

AVAGO

安华高

PC board mounting and direct insert mounting available

文件:1.60394 Mbytes Page:3 Pages

HUAXINAN

华兴安

Low Power, 5-MBd Digital CMOS Optocoupler

文件:721.15 Kbytes Page:16 Pages

BOARDCOM

博通

Low Power, 5-MBd Digital CMOS Optocoupler

文件:721.15 Kbytes Page:16 Pages

BOARDCOM

博通

更新时间:2025-12-27 17:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
IR
25+23+
TO-252
28158
绝对原装正品全新进口深圳现货
IR
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
INFINEON/英飞凌
23+
NA
30350
原厂授权代理,海外优势订货渠道。可提供大量库存,详
IR
2450+
TO-252-3
8540
只做原装正品假一赔十为客户做到零风险!!
Infineon(英飞凌)
24+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
IR
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
IR
23+
TO-252
8000
专注配单,只做原装进口现货
IR
23+
TO-252
7000
Infineon
24+
NA
3000
进口原装正品优势供应

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