Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

40V 单个 N 通道 HEXFET Power MOSFET, 采用PQFN 5 x 6 B/E 封装

Ultra Low On-Resistance

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Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

8-Bit, 4-Channel Data Acquisition System

GENERAL DESCRIPTION The AD8401 is a complete data acquisition and control system containing ADC, DAC, 4-channel MUX, and internal voltage reference. Built using CBCMOS, this monolithic circuit offers the user a complete system with very high package density and reliability. The converter is

Multipurpose control ASIC for OMNIFET

General Description The ASIC’ s purpose is to drive one OMNIFET n-channel power FET device. (OMNIFET is a trademark of SGS-THOMSON). The OMNIFET’ s integrated protection circuits (current limitation, over temperature protection, ...) are supplied via the OMNIFET’ s gate input. Thus in the OMNIF

Separate Excitation Switching Type with Coil

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Separate Excitation Switching Type with Coil

文件：77.42 Kbytes Page：6 Pages

FUNCTIONAL BRIDGE DRIVER

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