Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Stereo Systems

Overview The LA4905 is a BTL 2-channel power amplifier IC for use in car audio systems. Increases in the number of external components are held to a minimum by adopting both a signal-following type switching scheme in the amplifier’s output stage power supply, and a newly-developed nonlinear ampl

GaAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems ■ Features ● High-power output, high-efficiency: PO = 15 mW (min.) ● Fast response and high-speed modulation capability: fC = 30 MHz (typ.) ● Transparent epoxy resin package

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications

Features • Temperature compensated magnetic performance • Digital output signal • For unipolar and alternating magnetic fields • Large temperature range • Protection against reversed polarity • Output protection against electrical disturbances

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications

Features • Temperature compensated magnetic performance • Digital output signal • For unipolar and alternating magnetic fields • Large temperature range • Protection against reversed polarity • Output protection against electrical disturbances