型号 功能描述 生产厂家 企业 LOGO 操作

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE GRADE

文件:360.7 Kbytes Page:11 Pages

Infineon

英飞凌

AUTOMOTIVE GRADE

文件:360.7 Kbytes Page:11 Pages

Infineon

英飞凌

AUTOMOTIVE MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

Advanced Process Technology

文件:298.26 Kbytes Page:11 Pages

IRF

更新时间:2026-1-3 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3281
原装现货,当天可交货,原型号开票
Infineon(英飞凌)
24+
D2PAK7
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Infineon/英飞凌
24+
D2PAK-7
25000
原装正品,假一赔十!
IR
25+
TO-263
49
原装正品,欢迎来电咨询!
IR
1116+
TO-263-7
880000
明嘉莱只做原装正品现货
IR
25+23+
TO-263
15035
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
D2PAK-7
6820
只做原装,质量保证
INFINEON
24+
TO263-7
1000
市场最低 原装现货 假一罚百 可开原型号
IR
18+
D2PAK-7
85600
保证进口原装可开17%增值税发票
Infineon(英飞凌)
2447
D2PAK-7
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期

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