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AUIRF1404价格
参考价格：￥8.4407
型号：AUIRF1404 品牌：INTERNATIONAL 备注：这里有AUIRF1404多少钱，2026年最近7天走势，今日出价，今日竞价，AUIRF1404批发/采购报价，AUIRF1404行情走势销售排行榜，AUIRF1404报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AUIRF1404 | HEXFET짰 Power MOSFET 文件：218.09 Kbytes Page：12 Pages | IRF |   | |
AUIRF1404 | AUTOMOTIVE GRADE 文件：454.48 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
AUIRF1404 | 汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | IRF | | ||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | Infineon 英飞凌 | | ||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | Infineon 英飞凌 | | ||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | IRF | | ||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | IRF | | ||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | Infineon 英飞凌 | | ||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | IRF | | ||
Dynamic dV/dT Rating 文件：233.99 Kbytes Page：13 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Dynamic dV/dT Rating 文件：233.99 Kbytes Page：13 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low On-Resistance 文件：367.91 Kbytes Page：15 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HEXFET짰 Power MOSFET 文件：367.91 Kbytes Page：15 Pages | IRF | | ||
AUTOMOTIVE GRADE 文件：389.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | ||
汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装 | Infineon 英飞凌 | | ||
AUTOMOTIVE GRADE 文件：389.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
HEXFET짰 Power MOSFET 文件：367.91 Kbytes Page：15 Pages | IRF | | ||
Low On-Resistance 文件：367.91 Kbytes Page：15 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low On-Resistance 文件：367.91 Kbytes Page：15 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HEXFET짰 Power MOSFET 文件：367.91 Kbytes Page：15 Pages | IRF | | ||
AUTOMOTIVE GRADE 文件：389.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
AUTOMOTIVE GRADE 文件：389.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
Primary Standard Capacitor Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen | IET | | ||
Precision Lab Standard N Connectors Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability. | APITECH | | ||
It looks like a servo 文件：115.89 Kbytes Page：2 Pages | Adafruit | | ||
250A竊?0V N-CHANNEL MOSFET 文件：147.17 Kbytes Page：6 Pages | KIA 可易亚半导体 | | ||
ALUMINUM CHASSIS 文件：109.8 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
AUIRF1404产品属性
- 类型
描述
- 型号
AUIRF1404
- 功能描述
MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
D2PAK |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
2016+ |
TO-220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
IR |
24+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Infineon/英飞凌 |
24+ |
TO-220AB |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON/英飞凌 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
IR |
25+ |
TO-220 |
40 |
原装正品,欢迎来电咨询! |
|||
INFINEON/英飞凌 |
22+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-263 |
|||
Infineon(英飞凌) |
25+ |
D2PAK |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon/英飞凌 |
21+ |
TO-220AB |
6820 |
只做原装,质量保证 |
|||
INFINEON |
23+ |
TO-263 |
45000 |
原装正品 实单价格更优势 库位： |
AUIRF1404芯片相关品牌
AUIRF1404规格书下载地址
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AUIRF1404数据表相关新闻
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原装代理
2022-10-24AUIPS7111S
AUIPS7111S
2022-5-26AUIPS2051LTR深圳市明嘉莱科技有限公司18806643356
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2021-9-7AUIRFN8459PBF
AUIRFN8459PBF，全新原装当天发货或门市自取0755-82732291.
2020-1-11AUIRFN8459
AUIRFN8459 ，全新原装当天发货或门市自取0755-82732291.
2020-1-11
DdatasheetPDF页码索引
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