AUIRF1404价格

参考价格:¥8.4407

型号:AUIRF1404 品牌:INTERNATIONAL 备注:这里有AUIRF1404多少钱,2026年最近7天走势,今日出价,今日竞价,AUIRF1404批发/采购报价,AUIRF1404行情走势销售排行榜,AUIRF1404报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AUIRF1404

HEXFET짰 Power MOSFET

文件:218.09 Kbytes Page:12 Pages

IRF

AUIRF1404

AUTOMOTIVE GRADE

文件:454.48 Kbytes Page:10 Pages

INFINEON

英飞凌

AUIRF1404

汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

INFINEON

英飞凌

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

IRF

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

INFINEON

英飞凌

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

IRF

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

IRF

Dynamic dV/dT Rating

文件:233.99 Kbytes Page:13 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Dynamic dV/dT Rating

文件:233.99 Kbytes Page:13 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low On-Resistance

文件:367.91 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HEXFET짰 Power MOSFET

文件:367.91 Kbytes Page:15 Pages

IRF

AUTOMOTIVE GRADE

文件:389.15 Kbytes Page:13 Pages

INFINEON

英飞凌

汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

INFINEON

英飞凌

汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

INFINEON

英飞凌

AUTOMOTIVE GRADE

文件:389.15 Kbytes Page:13 Pages

INFINEON

英飞凌

HEXFET짰 Power MOSFET

文件:367.91 Kbytes Page:15 Pages

IRF

Low On-Resistance

文件:367.91 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low On-Resistance

文件:367.91 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HEXFET짰 Power MOSFET

文件:367.91 Kbytes Page:15 Pages

IRF

AUTOMOTIVE GRADE

文件:389.15 Kbytes Page:13 Pages

INFINEON

英飞凌

AUTOMOTIVE GRADE

文件:389.15 Kbytes Page:13 Pages

INFINEON

英飞凌

Fm Stereo Transmitter

ROHM

罗姆

Fm Stereo Transmitter

ROHM

罗姆

PRECISION LOW DRIFT VOLTAGE REFERENCES

Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s

ONSEMI

安森美半导体

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

JGD

固锝电子

Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit

Description: The NTE1404 is an integrated circuit in a 16–Lead DIP w/Fin type package designed for use as a TV sound signal processing circuit. Features: • Provides Total TV Sound Signal Processing Circuitry from IF Amplifier through AF Output • DC Volume Control System: Control Volt

NTE

AUIRF1404产品属性

  • 类型

    描述

  • 型号

    AUIRF1404

  • 功能描述

    MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-14 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
65200
一级代理/放心采购
Infineon/英飞凌
25+
TO-220AB
30000
原装正品公司现货,假一赔十!
INFINEON/英飞凌
22+
明嘉莱只做原装正品现货
2510000
TO-263
Infineon(英飞凌)
25+
D2PAK
22412
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
Infineon/英飞凌
21+
TO-220AB
6820
只做原装,质量保证
Infineon/英飞凌
2021+
TO-220AB
9600
原装现货,欢迎询价
INFINEON
23+
TO-263
45000
原装正品 实单价格更优势 库位:
IR
24+
TO-220
39197
郑重承诺只做原装进口现货
IR
新年份
TO-220
64540
一级代理原装正品现货,支持实单!

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