型号 功能描述 生产厂家 企业 LOGO 操作

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE GRADE

文件:360.7 Kbytes Page:11 Pages

Infineon

英飞凌

AUTOMOTIVE GRADE

文件:360.7 Kbytes Page:11 Pages

Infineon

英飞凌

Advanced Process Technology

文件:298.26 Kbytes Page:11 Pages

IRF

更新时间:2025-12-29 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3281
原装现货,当天可交货,原型号开票
Infineon(英飞凌)
24+
TO263-7
8048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
20+
TO-263-7
20500
汽车电子原装主营-可开原型号增税票
IR
25+
TO-263
49
原装正品,欢迎来电咨询!
IR
14+
TO-263
49
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon/英飞凌
2021+
D2PAK-7
9600
原装现货,欢迎询价
IR
23+
TO-263
12800
公司只有原装 欢迎来电咨询。
Infineon/英飞凌
24+
D2PAK-7
25000
原装正品,假一赔十!
IR
1116+
TO-263-7
880000
明嘉莱只做原装正品现货
IR
2450+
TO-263-7
8850
只做原装正品假一赔十为客户做到零风险!!

AUF2804S-7PTRL数据表相关新闻