型号 功能描述 生产厂家 企业 LOGO 操作

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

Advanced Process Technology

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Advanced Process Technology

文件:286.19 Kbytes Page:10 Pages

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更新时间:2026-3-14 22:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
22+
TO-263-7P
25800
原装正品支持实单
IR
24+
65230
IR
22+
TO-263
20000
公司只做原装 品质保障
VISHAY
24+
TO-263
12000
VISHAY专营进口原装现货假一赔十
IR
21+
TO-263
30000
百域芯优势 实单必成 可开13点增值税
IR
23+
NA
156
专做原装正品,假一罚百!
IR
2540+
TO-263
8595
只做原装正品假一赔十为客户做到零风险!!
IR
25+
TO-263-7
4500
全新原装、诚信经营、公司现货销售
IR
1524+
TO-263
50
全新 发货1-2天

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