EcoXiP??High Performance Low-Power Octal Flash

文件：2.20723 Mbytes Page：108 Pages

EcoXiP Octal xSPI Memory

EcoXiP??High Performance Low-Power Octal Flash

文件：2.20723 Mbytes Page：108 Pages

EcoXiP??High Performance Low-Power Octal Flash

文件：2.20723 Mbytes Page：108 Pages

封装/外壳：24-VBGA 包装：散装 描述：IC FLASH 128MBIT SPI/OCTL 24CBGA 集成电路（IC） 存储器

EcoXiP??High Performance Low-Power Octal Flash

文件：2.20723 Mbytes Page：108 Pages

EcoXiP??High Performance Low-Power Octal Flash

文件：2.20723 Mbytes Page：108 Pages

封装/外壳：78-UFBGA，WLCSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FLSH 128MBIT SPI/OCTL 78WLCSP 集成电路（IC） 存储器

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

文件：49.24 Kbytes Page：2 Pages