RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF Power LDMOS Transistors

文件：1.43744 Mbytes Page：27 Pages